IRF6724MTR1PBF International Rectifier, IRF6724MTR1PBF Datasheet - Page 7

• Manufacturer Part Number: IRF6724MTR1PBF
• Description: MOSFET N-CH 30V 27A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6724MTR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 27A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 54nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4404pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6724MTR1PBFTR


www.irf.com
‚
+
-
D.U.T
™
ƒ
+
-
•
•
•
•
SD
Fig 18.
•
•
•
-
G
„
D
D
+
HEXFET
+
-
G
®
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
S
S
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
G = GATE
D = DRAIN
S = SOURCE
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
for N-Channel
D
D
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
IRF6724MPbF
Period
P.W.
V
V
I
SD
GS
DD
=10V
7