IRF7422D2 International Rectifier, IRF7422D2 Datasheet - Page 2

• Manufacturer Part Number: IRF7422D2
• Description: MOSFET P-CH 20V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7422D2

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 610pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7422D2

IRF7422D2
MOSFET Electrical Characteristics @ T
MOSFET Source-Drain Ratings and Characteristics
Schottky Diode Electrical Specifications
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
Schottky Diode Maximum Ratings
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
If (av)
I
Vfm
Irm
Ct
dv/dt
SM
DSS
GSS
d(on)
r
d(off)
f
S
rr
SM
DS(on)
fs
(BR)DSS
GS(th)
SD
iss
oss
rss
rr
g
gs
gd
2
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current(Body Diode) –––
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse RecoveryCharge
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Forward voltage drop
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
Parameter
Parameter
Parameter
Parameter
-0.70 –––
Max. Units
4900 V/µs
Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
0.77
0.79
0.13
0.57
0.52
–––
–––
310
––– 0.07 0.09
––– 0.115 0.14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
-20
–––
4.0
2.8
1.8
20
18
J
= 25°C (unless otherwise specified)
–––
–––
–––
–––
–––
–––
––– -100
–––
610
310
170
–––
2.2
6.0
8.4
mA
15
26
51
33
56
71
pF
A
V
A
-1.0
-1.0
110
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
-2.5
-25
3.3
9.0
-17
84
22
50% Duty Cycle. Rectangular Wave, Tc = 25°C
50% Duty Cycle. Rectangular Wave, Tc = 70°C
5µs sine or 3µs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Vr = 20V
Rated Vr
nA
µA
nC
nC
ns
pF
ns
V
Ω
V
S
A
V
T
T
di/dt = -100A/µs ƒ
Conditions
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
Tj = 25°C
Tj = 125°C
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= -2.2A
= -2.2A
= 25°C, I
= 25°C, I
= 6.0Ω
= 4.5Ω, See Fig. 10 ƒ
= V
= -16V, I
= -16V, V
= -16V, V
= -16V
= -15V
Conditions
= 0V, I
= -4.5V, I
= -2.7V, I
= -12V
= 12V
= -4.5V, See Fig. 6 and 9 ƒ
= -10V
= 0V
GS
Conditions
.
, I
D
S
F
D
Conditions
= -250µA
D
= -1.8A, V
= -2.2A
D
D
GS
GS
= -250µA
= -2.2A
= -2.2A ƒ
= -1.8A ƒ
= 0V
= 0V, T
Following any rated
with Vrrm applied
www.irf.com
GS
J
= 125°C
= 0V