IRF7422D2 International Rectifier, IRF7422D2 Datasheet - Page 4

• Manufacturer Part Number: IRF7422D2
• Description: MOSFET P-CH 20V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7422D2

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 610pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7422D2

IRF7422D2
4
1500
1000
100
0.1
500
10
1
0
0.3
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
Drain-to-Source Voltage
-V
-V
SD
DS
C
C
C
0.6
iss
oss
, Source-to-Drain Voltage (V)
V
C
C
C
rss
T = 150°C
Forward Voltage
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
J
= 0V,
= C
= C
= C
gs
gd
ds
0.9
+ C
+ C
10
gd
gd
f = 1MHz
T = 25°C
J
, C
Power Mosfet Characteristics
ds
1.2
SHORTED
V
GS
= 0V
1.5
100
A
A
100
10
10
Fig 8. Maximum Safe Operating Area
8
6
4
2
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I
V
T
T
Single Pulse
D
C
J
DS
= -2.2A
= 25 C
= 150 C
= -16V
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
-V
DS
°
Q , Total Gate Charge (nC)
5
°
G
, Drain-to-Source Voltage (V)
10
BY R
10
DS(on)
FOR TEST CIRCUIT
15
SEE FIGURE 12
100us
1ms
10ms
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20
100
25
A