IRF7422D2 International Rectifier, IRF7422D2 Datasheet - Page 5

• Manufacturer Part Number: IRF7422D2
• Description: MOSFET P-CH 20V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7422D2

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 610pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7422D2

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100
0.1
0.4
0.3
0.2
0.1
0.0
10
0.00001
1
0
0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V
GS
= -5.0V
2
(THERMAL RESPONSE)
I , Drain Current (A)
0.0001
D
V
SINGLE PULSE
GS
= -2.5V
4
0.001
Power Mosfet Characteristics
6
t , Rectangular Pulse Duration (sec)
1
0.01
8
A
0.14
0.12
0.10
0.08
0.06
0.04
0.1
2
V
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
3
, Gate-to-Source Voltage (V)
1
J
I
D
4
DM
= -4.3A
x Z
IRF7422D2
1
thJA
P
2
DM
5
+ T
10
A
t
1
t
2
6
5
100
7
A