IXTQ130N10T IXYS, IXTQ130N10T Datasheet - Page 2

• Manufacturer Part Number: IXTQ130N10T
• Description: MOSFET N-CH 100V 130A TO-3P
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTQ130N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 104nC @ 10V
• Input Capacitance (ciss) @ Vds: 5080pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 130 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 130
• Rds(on), Max, Tj=25°c, (?): 0.0091
• Ciss, Typ, (pf): 5080
• Qg, Typ, (nc): 104
• Trr, Typ, (ns): 67
• Trr, Max, (ns): -
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
I
Q
Notes: 1.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
S
SM
d(on)
r
d(off)
f
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
J
SD
iss
oss
rss
thJC
thCH
g(on)
gs
gd
rr
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
2. On through-hole packages, R
location must be 5mm or less from the package body.
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
I
-di/dt = 100A/μs
V
F
F
DS
GS
GS
GS
GS
R
G
= 25A, V
= 25A, V
= 50V
= 10V, I
= 10V, V
= 5Ω (External)
= 0V, V
= 10V, V
= 0V
GS
GS
D
DS
DS
DS
= 60A, Note 1
= 0V, Note 1
= 0V
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 25A
= 25A
Kelvin test contact
5,049,961
5,063,307
5,187,117
JM
Characteristic Values
5,237,481
5,381,025
5,486,715
Min.
55
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
5080
0.25
Typ.
635
104
160
Typ.
4.7
93
95
30
47
44
28
30
29
67
0.42 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
130
350
Max.
1.0
°C/W
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
A
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
Pins: 1 - Gate
TO-3P (IXTQ) Outline
TO-247 (IXTH) Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
3 - Source 4, TAB - Drain
A
A
A
b
b
b
C
D
E
e
L
L1
∅ P
Q
R
1
2
1
2
20.80 21.46
15.75 16.26
19.81 20.32
1.65
2.87
5.20
3.55
5.89
4.32
Min.
Millimeter
4.7
2.2
2.2
1.0
1
.4
7,005,734 B2
7,063,975 B2
IXTQ130N10T
2
IXTH130N10T
2 - Drain
Max.
2.54
2.13
3.12
5.72 0.205 0.225
4.50
3.65
6.40 0.232 0.252
5.49
3
5.3
2.6
1.4
.8
e
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min. Max.
2 - Drain
Inches
7,157,338B2
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216