IXTQ130N10T IXYS, IXTQ130N10T Datasheet - Page 5

• Manufacturer Part Number: IXTQ130N10T
• Description: MOSFET N-CH 100V 130A TO-3P
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTQ130N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 104nC @ 10V
• Input Capacitance (ciss) @ Vds: 5080pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 130 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 130
• Rds(on), Max, Tj=25°c, (?): 0.0091
• Ciss, Typ, (pf): 5080
• Qg, Typ, (nc): 104
• Trr, Typ, (ns): 67
• Trr, Max, (ns): -
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
130
120
110
100
40
38
36
34
32
30
28
26
24
90
80
70
60
50
40
30
20
65
60
55
50
45
40
35
30
25
25
25
4
t
R
V
t
T
V
f
DS
G
r
J
DS
Switching Times vs. Gate Resistance
Switching Times vs. Drain Current
= 125ºC, V
= 5 Ω , V
35
= 50V
= 50V
6
Rise Time vs. Junction Temperature
I
D
30
Fig. 17. Resistive Turn-off
= 25A
45
Fig. 15. Resistive Turn-on
GS
t
8
t
d(off)
Fig. 13. Resistive Turn-on
d(on)
= 10V
GS
55
= 10V
I
T
- - - -
D
- - - -
10
J
R
35
- Amperes
I
- Degrees Centigrade
G
D
- Ohms
65
= 50A
I
D
12
= 50A
75
T
J
40
= 25ºC
14
85
T
16
J
= 125ºC
95
45
I
R
V
V
D
G
GS
DS
18
= 25A
105
= 5 Ω
= 10V
= 50V
50
20
115
70
66
62
58
54
50
46
42
38
53
50
47
44
41
38
35
32
29
26
23
20
125
100
40
38
36
34
32
30
28
26
90
80
70
60
50
40
30
62
58
54
50
46
42
38
34
30
26
22
25
4
Switching Times vs. Junction Temperature
25
t
R
V
f
G
DS
t
T
V
Switching Times vs. Gate Resistance
J
r
DS
35
= 5 Ω , V
R
V
V
= 125ºC, V
= 50V
G
GS
DS
I
6
= 50V
D
= 5 Ω
= 10V
= 50V
= 25A
45
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
GS
30
t
8
T
d(off)
Rise Time vs. Drain Current
I
t
= 10V
J
d(on)
Fig. 14. Resistive Turn-on
D
GS
55
- Degrees Centigrade
= 50A
= 10V
- - - -
10
- - - -
R
65
G
I
- Ohms
D
35
- Amperes
12
75
I
D
T
T
85
= 50A
J
J
I
14
25A < I
= 25ºC
= 125ºC
D
= 25A
40
95
IXYS REF: T_130N10T(V3)07-29-08-A
IXTQ130N10T
IXTH130N10T
16
D
< 50A
105
18
115
45
20
125
170
150
130
110
90
70
50
30
68
64
60
56
52
48
44
40
50