IRFB3004GPBF International Rectifier, IRFB3004GPBF Datasheet
IRFB3004GPBF
Specifications of IRFB3004GPBF
Related parts for IRFB3004GPBF
IRFB3004GPBF Summary of contents
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... Parameter jk IRFB3004GPbF HEXFET Power MOSFET D V DSS R typ. DS(on) max (Silicon Limited (Package Limited TO-220AB IRFB3004GPbF G D Drain Max. ™ 340 ™ 240 195 1310 380 2.5 ± 20 4.4 - 175 300 x x 10lbf in (1.1N m) 300 See Fig. 14, 15, 22a, 22b Typ ...
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Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 1000 4.8V BOTTOM 4.5V 4.5V 100 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...
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175°C 100 25° 0.1 0.0 0.5 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 350 300 Limited By Package 250 ...
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D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 0.01 100 0.05 0.10 10 Allowed avalanche ...
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250µ 1.0mA 2 1.0A 1.5 1.0 -75 -50 - 100 125 150 175 200 Temperature ( °C ) Fig ...
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D.U.T + ƒ ‚ - • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 ...
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TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 Data and specifications ...