IRFB23N20DPBF International Rectifier, IRFB23N20DPBF Datasheet - Page 2

• Manufacturer Part Number: IRFB23N20DPBF
• Description: MOSFET N-CH 200V 24A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB23N20DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 1960pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 24 A
• Gate Charge, Total: 57 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 170 W
• Resistance, Drain To Source On: 0.1 Ohm
• Resistance, Thermal, Junction To Case: 0.9 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 26 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 13 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 24 A
• Mounting Style: Through Hole
• Gate Charge Qg: 57 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB23N20DPBF

Diode Characteristics
IRFB/IRFS/IRFSL23N20DPbF
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Static @ T
R
I
R
R
R
R
V
∆V
V
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
E
I
I
V
t
Q
t
GSS
DSS
d(on)
r
d(off)
f
AR
SM
on
S
rr
fs
2
θJC
θCS
θJA
θJA
(BR)DSS
DS(on)
GS(th)
AS
AR
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) †
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
Single Pulse Avalanche Energy‚†
Avalanche Current
Repetitive Avalanche Energy
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
–––
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
Min. Typ. Max. Units
13
–––
–––
–––
–––
––– 1300 1940
Intrinsic turn-on time is negligible (turn-on is dominated by L
1960 –––
2200 –––
0.26 –––
–––
––– 0.10
–––
–––
–––
–––
––– -100
–––
300
120
220
–––
–––
–––
200
57
14
27
14
32
26
16
65
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
250
100
300
5.5
1.3
96
25
86
21
40
24
V/°C
nC
µA
nA
ns
pF
nC
ns
V
Ω
V
S
Typ.
V
Typ.
0.50
–––
–––
–––
–––
–––
–––
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz†
V
V
V
V
V
V
V
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
Reference to 25°C, I
I
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 14A
= 14A
= 25°C, I
= 25°C, I
= 4.6Ω
= V
= 200V, V
= 160V, V
= 50V, I
= 160V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V, „†
= 100V
= 10V „
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 14A, V
= 14A
= 250µA
= 14A
= 14A
GS
GS
= 0V to 160V …
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 160V, ƒ = 1.0MHz
0.90
–––
250
62
40
14
17
= 0V, T
= 0V
www.irf.com
D
GS
= 1mA †
„
J
= 0V „
G
= 150°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
D
S
)