MOSFET P-CH 200V 26A TO-247

IXTH26P20P

Manufacturer Part NumberIXTH26P20P
DescriptionMOSFET P-CH 200V 26A TO-247
ManufacturerIXYS
SeriesPolarP™
IXTH26P20P datasheet
 


Specifications of IXTH26P20P

Fet TypeMOSFET P-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs170 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)200V
Current - Continuous Drain (id) @ 25° C26AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs56nC @ 10VInput Capacitance (ciss) @ Vds2740pF @ 25V
Power - Max300WMounting TypeThrough Hole
Package / CaseTO-247ConfigurationSingle
Transistor PolarityP-ChannelResistance Drain-source Rds (on)0.17 Ohms
Drain-source Breakdown Voltage- 200 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current26 APower Dissipation300 W
Maximum Operating Temperature+ 175 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)-200
Id(cont), Tc=25°c, (a)-26Rds(on), Max, Tj=25°c, (?)0.17
Ciss, Typ, (pf)2740Qg, Typ, (nc)56
Trr, Typ, (ns)240Pd, (w)300
Rthjc, Max, (k/w)0.42Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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PolarP
TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
G
S
D(TAB)
Symbol
Test Conditions
V
T
= 25°C to 175°C
DSS
J
V
T
= 25°C to 175°C, R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25°C
D25
C
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
AR
C
E
T
= 25°C
AR
C
E
T
= 25°C
AS
C
≤ I
≤ V
dV/dt
I
, V
, T
S
DM
DD
DSS
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6mm (0.062 in.) from case for 10s
L
T
Plastic body for 10s
SOLD
M
Mounting torque
(TO-3P,TO-220,TO-247)
d
Weight
TO-247
TO-3P
TO-220
TO-263
Symbol
Test Conditions
(T
= 25°C, unless otherwise specified)
J
= -250 μA
BV
V
= 0V, I
DSS
GS
D
V
V
= V
, I
= -250μA
GS(th)
DS
GS
D
= ±20V, V
I
V
= 0V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0V
GS
R
V
= -10V, I
= 0.5 • I
DS(on)
GS
D
© 2007 IXYS CORPORATION, All rights reserved
Preliminary Technical Information
IXTA26P20P
IXTH26P20P
IXTP26P20P
IXTQ26P20P
TO-247 (IXTH)
G
D
S
Maximum Ratings
- 200
= 1MΩ
- 200
GS
±20
±30
- 26
- 70
JM
- 26
50
1.5
≤ 175°C
10
J
300
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6.0
5.5
3.0
2.5
Characteristic Values
Min.
Typ.
- 200
- 2.5
T
= 150°C
J
, Note 1
D25
V
=
DSS
I
=
D25
≤ ≤ ≤ ≤ ≤
R
DS(on)
TO-220 (IXTP)
D(TAB)
G
D
S
TO-3P (IXTQ)
V
V
V
V
G
D
A
S
A
G = Gate
A
S = Source
mJ
J
V/ns
Features:
W
International standard packages
°C
Fast intrinsic diode
°C
Dynamic dV/dt Rated
°C
Avalanche Rated
°C
Rugged PolarP
°C
Low Q
and R
G
Low Drain-to-Tab capacitance
Nm/lb.in.
Low package inductance
g
- easy to drive and to protect
g
g
Applications:
g
Hight side switching
Push-pull amplifiers
DC Choppers
Max.
Current regulators
Automatic test equipment
V
Advantages:
- 4.5
V
±100 nA
Low gate charge results in simple
- 10 μA
drive requirement
- 250 μA
Improved Gate, Avalanche and
dynamic dV/dt ruggedness
170 mΩ
High power density
Fast switching
- 200V
- 26A
170mΩ Ω Ω Ω Ω
D(TAB)
D(TAB)
D = Drain
TAB = Drain
TM
process
characterization
ds(on)
DS99913(10/07)

IXTH26P20P Summary of contents

  • Page 1

    ... ±20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTA26P20P IXTH26P20P IXTP26P20P IXTQ26P20P TO-247 (IXTH Maximum Ratings - 200 = 1MΩ - 200 GS ±20 ± 1.5 ≤ 175° 300 -55 ... +175 175 -55 ... +175 300 260 1 ...

  • Page 2

    ... The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. ...

  • Page 3

    ... TO-263 (IXTA) Outline TO-220 (IXTP) Outline Pins Gate © 2007 IXYS CORPORATION, All rights reserved TO-247 (IXTH) Outline TO-3P (IXTQ) Outline 2 - Drain IXTA26P20P IXTP26P20P IXTP26P20P IXTQ26P20P ∅ Terminals Gate 2 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2 ...

  • Page 4

    ... I - Amperes D IXYS reserves the right to change limits, test conditions, and dimensions. - -10V GS -80 -8V -70 -7V -60 -50 -6V -40 -30 -20 -5V -10 -2.5 -3.0 -3.5 -4.0 -4.5 2.8 ...

  • Page 5

    ... Fig. 9. Forward Voltage Drop of Intrinsic Diode -80 -70 -60 -50 - 150ºC J -30 -20 -10 0 -0 Volts SD Fig. 11. Capacitance 10,000 MHz 1,000 100 -10 -15 - Volts DS © 2007 IXYS CORPORATION, All rights reserved 40ºC J 25ºC 24 150º -5.5 -6 -6 25º -2 100 ...

  • Page 6

    ... IXYS reserves the right to change limits, test conditions, and dimensions. Fig. 13. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXTA26P20P IXTP26P20P IXTP26P20P IXTQ26P20P 0.1 1 IXYS REF: T_26P20P(B5)10-10-07 10 ...