IXTH26P20P IXYS, IXTH26P20P Datasheet - Page 2

• Manufacturer Part Number: IXTH26P20P
• Description: MOSFET P-CH 200V 26A TO-247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTH26P20P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 2740pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.17 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 26 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -200
• Id(cont), Tc=25°c, (a): -26
• Rds(on), Max, Tj=25°c, (?): 0.17
• Ciss, Typ, (pf): 2740
• Qg, Typ, (nc): 56
• Trr, Typ, (ns): 240
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
IXYS reserves the right to change limits, test conditions, and dimensions.
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
V
V
Resistive Switching Times
V
R
V
(TO-3P)(TO-247)
(TO-220)
V
Repetitive
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= -13A, V
= -13A, -di/dt = -100A/μs
= -100V, V
PRELIMINARY TECHNICAL INFORMATION
= -10V, I
= 0V, V
= -10V, V
= 3.3Ω (External)
= -10V, V
= 0V
DS
GS
D
DS
DS
GS
= -25V, f = 1MHz
= 0.5 • I
= 0V, Note 1
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
= 0V
D25
, (Note 1)
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
D25
D25
5,237,481
5,381,025
5,486,715
Min.
10
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
-18.0
2920
Typ.
0.21
0.25
Typ.
2.20
540
100
240
18
33
46
21
56
18
20
17
- 104
Max.
- 3.0
0.5 °C/W
6,404,065 B1
6,534,343
6,583,505
- 26
Max.
°C/W
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTA26P20P IXTP26P20P
IXTP26P20P IXTQ26P20P
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2