IXFH75N10 IXYS, IXFH75N10 Datasheet - Page 2

MOSFET N-CH 100V 75A TO-247AD

IXFH75N10

Manufacturer Part Number
IXFH75N10
Description
MOSFET N-CH 100V 75A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH75N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohms
Forward Transconductance Gfs (max / Min)
30 s
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Fall Time
60 ns
Rise Time
60 ns
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
75
Rds(on), Max, Tj=25°c, (?)
0.02
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
180
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH75N10
Manufacturer:
ON
Quantity:
10 000
Part Number:
IXFH75N10Q
Manufacturer:
IXYS
Quantity:
35 500
© 2000 IXYS All rights reserved
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
S
SM
d(on)
d(off)
f
r
rr
fs
SD
oss
thJC
thCK
iss
rss
g(on)
gs
gd
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
V
F
F
DS
GS
R
= I
= 25 A, -di/dt = 100 A/ms, T
= 25 V
= 0 V
S
= 10 V; I
V
V
R
V
, V
GS
GS
GS
G
= 2 W, (External)
GS
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= I
D25
DS
DS
DS
, pulse test
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
JM
67N10
75N10
67N10
75N10
T
J
J
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
DSS
DSS
(T
(T
=
= 125°C
, I
, I
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
D
25°C
= 0.5 I
= 0.5 I
4,881,106
4,931,844
D25
D25
min.
min.
25
Characteristic Values
Characteristic Values
5,017,508
5,034,796
4500
1600
typ.
typ.
0.25
800
180
30
20
60
80
60
36
85
0.42
max.
max.
110
110
260
160
1.75
30
90
70
268
300
200 ns
300 ns
5,049,961
5,063,307
67
75
K/W
K/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
A
S
A
A
A
V
IXFH 67N10
IXFM 67N10
5,187,117
5,237,481
TO-204 AE (IXFM) Outline
TO-247 AD (IXFH) Outline
Dim. Millimeter
5,486,715
5,381,025
A
B
C
D
E
F
G
H
J
K
L
M
N
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
Min. Max.
38.61 39.12
30.15
10.67 11.17
16.64 17.14
11.18 12.19
25.16 26.66
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
6.40 11.40
1.45
1.52
5.21
3.84
Min.
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
Millimeter
-
- 22.22
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
Max.
BSC
1.60
3.43
5.71
4.19
IXFH 75N10
IXFM 75N10
Min.
1.520 1.540
0.252 0.449
0.057 0.063
0.060 0.135
1.187
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.050
Inches
Min.
Inches
0.177
- 0.875
Max.
Max.
BSC
2 - 4

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