IXFH75N10 IXYS, IXFH75N10 Datasheet - Page 3

MOSFET N-CH 100V 75A TO-247AD

IXFH75N10

Manufacturer Part Number
IXFH75N10
Description
MOSFET N-CH 100V 75A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH75N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohms
Forward Transconductance Gfs (max / Min)
30 s
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Fall Time
60 ns
Rise Time
60 ns
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
75
Rds(on), Max, Tj=25°c, (?)
0.02
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
180
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH75N10
Manufacturer:
ON
Quantity:
10 000
Part Number:
IXFH75N10Q
Manufacturer:
IXYS
Quantity:
35 500
© 2000 IXYS All rights reserved
200
150
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
50
80
60
40
20
0
0
-50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
J
T
= 25°C
-25
20
J
= 25°C
Case Temperature
DS(on)
40
0
75N10
67N10
T
60
25
vs. Drain Current
I
C
D
V
- Degrees C
- Amperes
DS
80
50
- Volts
V
GS
100 120 140 160
75
= 10V
V
GS
100 125 150
V
= 15V
GS
= 10V
8V
9V
6V
5V
7V
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
150
125
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
75
50
25
0
-50
-50
0
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
1
-25
-25
IXFH 67N10
IXFM 67N10
V
GS(th)
2
of Drain to Source Resistance
Breakdown and Threshold Voltage
0
0
3
T
T
T
J
25
25
J
J
= 125°C
V
4
- Degrees C
- Degrees C
I
GS
D
= 37.5A
50
50
- Volts
5
6
75
75
T
J
= 25°C
7
100 125 150
100 125 150
IXFH 75N10
IXFM 75N10
BV
8
DSS
9
10
3 - 4

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