IXFH12N100 IXYS, IXFH12N100 Datasheet
IXFH12N100
Specifications of IXFH12N100
Available stocks
Related parts for IXFH12N100
IXFH12N100 Summary of contents
Page 1
... 0.8 • V DSS DS DSS 0.5 • I DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXFH/IXFM 10 N100 1000 V IXFH/IXFM 12 N100 1000 V Family Maximum Ratings 1000 = 1 MΩ 1000 GS ±20 ±30 10N100 10 12N100 12 10N100 40 JM 12N100 ...
Page 2
... -di/dt = 100 A/µ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. , pulse test 6 10 D25 4000 ...
Page 3
... J 1.4 1.3 1 10V GS 1.1 1.0 0 Amperes D Fig. 5 Drain Current vs. Case Temperature 12N100 12 10 10N100 -50 - Degrees C C © 2004 IXYS All rights reserved V = 10V 15V 100 125 150 IXFH 10N100 IXFH 12N100 IXFM 10N100 IXFM 12N100 Fig. 2 Input Admittance 25° ...
Page 4
... D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 100 125 150 15 20 0.001 0.01 Time - Seconds ...