TK50P03M1(T6RSS-Q) Toshiba, TK50P03M1(T6RSS-Q) Datasheet - Page 5

• Manufacturer Part Number: TK50P03M1(T6RSS-Q)
• Description: MOSFET N-CH 30V 50A DP SC-64
• Manufacturer: Toshiba

Specifications of TK50P03M1(T6RSS-Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.3V @ 200µA
• Gate Charge (qg) @ Vgs: 25.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TK50P03M1(T6RSSQ)TR

10000
1000
100
100
20
16
12
10
80
60
40
20
−80
8
4
0
0
0.1
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
V GS = 4.5 V
V GS = 10 V
−40
Drain-source voltage V
Ambient temperature Ta (
Case temperature Tc (
40
Capacitance – V
0
1
R
DS (ON)
P
D
40
80
– Tc
– Ta
25
80
10
DS
I D = 12.5, 25, 50 A
DS
I D = 50 A
120
°
°
C)
(V)
C)
120
12.5
C oss
C rss
C iss
160
100
160
5
2.5
1.5
0.5
100
10
50
40
30
20
10
3
2
1
0
−80
1
0
0
0
Common source
V DS = 10 V
I D = 0.2 mA
Pulse test
V DS
Common source
Ta = 25°C
Pulse test
−40
Drain-source voltage V
Ambient temperature Ta (
−0.2
10
Total gate charge Q
10
Dynamic input/output
V DD = 6 V
V GS
0
characteristics
−0.4
20
I
DR
V
th
4.5
– V
40
– Ta
DS
−0.6
30
12
3
1
24
80
g
DS
Common source
I D = 40 A
Ta = 25°C
Pulse test
(nC)
−0.8
TK50P03M1
40
°
(V)
120
V GS = 0 V
C)
2009-09-08
−1.0
160
50
20
16
12
8
4
0