TK50P03M1(T6RSS-Q) Toshiba, TK50P03M1(T6RSS-Q) Datasheet - Page 6

• Manufacturer Part Number: TK50P03M1(T6RSS-Q)
• Description: MOSFET N-CH 30V 50A DP SC-64
• Manufacturer: Toshiba

Specifications of TK50P03M1(T6RSS-Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.3V @ 200µA
• Gate Charge (qg) @ Vgs: 25.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TK50P03M1(T6RSSQ)TR

1000
0.01
100
0.1
10
1
0.1
I D max (Pulse) *
* Single – pulse Ta = 25℃
Curves must be derated
linearly with increase in
temperature.
Drain-source voltage V
Safe operating area
1
0.01
10 ms *
0.1
10
10μ
1
0.05
0.1
0.2
Duty = 0.5
V DSS max
0.01
10
t = 1 ms *
DS
0.02
100μ
(V)
SINGLE PULSE
100
1m
Pulse width t
r
th
6
/R
R
V
DD
th (ch-c)
G
10m
= 25 Ω
= 24 V, L = 20 μH
−15 V
w
– t
15 V
100
80
60
40
20
0
w
25
(s)
Test circuit
100m
Channel temperature (initial) Tch (
50
P DM
Duty = t/T
R th (ch-c) = 2.08 °C/W
75
E
Ε AS
t
1
AS
V
T
DD
– Tch
=
B
Wave form
1
2
VDSS
100
I
⋅
AR
L
⋅
2 I
TK50P03M1
⋅
10
⎛
⎜
⎜
⎝
B VDSS
125
V
2009-09-08
DS
B VDSS
°
C)
−
150
V DD
⎞
⎟
⎟
⎠