TK50P04M1(T6RSS-Q) Toshiba, TK50P04M1(T6RSS-Q) Datasheet
TK50P04M1(T6RSS-Q)
Specifications of TK50P04M1(T6RSS-Q)
Related parts for TK50P04M1(T6RSS-Q)
TK50P04M1(T6RSS-Q) Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. ...
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Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Marking (Note 4) TK50P04M Note 1: The channel temperature should not exceed 150°C during use 25°C (initial μH, R ...
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Electrical Characteristics Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Rise time Turn-on time Switching time Fall time Turn-off time Total ...
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I – Common source 10 4.5 3 25°C 6 Pulse test 2 0.2 0.4 0.6 0.8 Drain-source voltage – V ...
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R – (ON) 20 Common source Pulse test 12 4 12.5, 25 −80 − Ambient ...
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Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10μ 100μ Safe operating area 1000 I D max (Pulse) * 100 Single – pulse Ta = ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...