TK50P04M1(T6RSS-Q) Toshiba, TK50P04M1(T6RSS-Q) Datasheet - Page 4

• Manufacturer Part Number: TK50P04M1(T6RSS-Q)
• Description: MOSFET N-CH 40V 50A DP SC-64
• Manufacturer: Toshiba

Specifications of TK50P04M1(T6RSS-Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.3V @ 500µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TK50P04M1(T6RSSQ)TR

1000
100
100
0.1
50
40
30
20
10
10
80
60
40
20
0
1
0
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
Drain-source voltage V
Gate-source voltage V
0.2
1
Drain current I
10
Ta = −55°C
1
0.4
2
⎪Y
I
I
8
D
D
4.5
100
6
fs
– V
100
– V
⎪ – I
GS
DS
0.6
D
3
D
Ta = −55°C
3.5
25
10
25
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS = 2.8 V
0.8
(V)
4
(V)
3.3
3.2
3.1
3
100
5
1
4
100
100
0.8
0.6
0.4
0.2
80
60
40
20
10
0
0
1
0
0
1
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25 ℃
Pulse test
Drain-source voltage V
Gate-source voltage V
0.4
2
Drain current I
10
R
0.8
V
DS (ON)
4
I
D
DS
8
– V
V GS = 10 V
10
– V
6
4.5
DS
4.5
GS
4
– I
1.2
6
D
12.5
D
DS
GS
(A)
Common source
Ta = 25℃
Pulse test
I D = 50 A
25
V GS = 2.8 V
1.6
TK50P04M1
(V)
(V)
8
2009-09-08
3.5
3.3
3.2
3.7
3
100
10
2