AO3414 Alpha & Omega Semiconductor Inc, AO3414 Datasheet

MOSFET N-CH 20V 4.2A SOT23

AO3414

Manufacturer Part Number
AO3414
Description
MOSFET N-CH 20V 4.2A SOT23
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO3414

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 4.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
6.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
436pF @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1009-2

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Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
General Description
The AO3414 uses advanced trench technology to
The AO3414 uses advanced trench technology to
provide excellent R
provide excellent R
operation with gate voltages as low as 1.8V. This
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
device is suitable for use as a load switch or in PWM
applications.
applications.
Rev 7: July 2010
A
D
D
Top View
Top View
G
G
A
DS(ON)
DS(ON)
B
T
T
T
T
A
A
A
A
=25° C
=70° C
=25° C
=70° C
SOT23
SOT23
, low gate charge and
, low gate charge and
S
S
C
A
A
Bottom View
Bottom View
D
D
A
=25° C unless otherwise noted
Steady-State
Steady-State
S
S
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
G
G
J
DS
GS
D
www.aosmd.com
, T
STG
Symbol
Features
Features
V
V
I
I
R
R
R
R
R
R
D
D
R
R
DS
DS
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
= 3A
= 3A
JA
JL
= 20V
= 20V
< 62m
< 62m
< 70m
< 70m
< 85m
< 85m
Maximum
-55 to 150
Typ
100
2.5
1.4
0.9
20
±8
16
70
63
G
G
3
20V N-Channel MOSFET
(V
(V
(V
(V
(V
(V
(V
(V
GS
GS
GS
GS
GS
GS
GS
GS
Max
125
90
80
= 4.5V)
= 4.5V)
= 4.5V)
= 4.5V)
= 2.5V)
= 2.5V)
= 1.8V)
= 1.8V)
D
D
S
S
AO3414
Units
Units
° C/W
° C/W
° C/W
° C
W
V
V
A
Page 1 of 5

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AO3414 Summary of contents

Page 1

... General Description General Description The AO3414 uses advanced trench technology to The AO3414 uses advanced trench technology to provide excellent R provide excellent R , low gate charge and , low gate charge and DS(ON) DS(ON) operation with gate voltages as low as 1.8V. This operation with gate voltages as low as 1.8V. This ...

Page 2

... V =4.5V, V =10V =5V, V =10V GEN I =3A, dI/dt=100A =3A, dI/dt=100A FR-4 board with 2oz. copper still air environment with T and lead to ambient FR-4 board with 2oz. Copper still air environment with T 12 www.aosmd.com www.aosmd.com AO3414 Min Typ Max Units 100 nA 0.4 0 0.7 ...

Page 3

... V V =1.8V =1. =2.5A =2. =2.5V =2. =2.8A =2. -25 - 100 125 150 175 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 125°C 25° 0.0 0.2 0.4 0.6 0.8 V (Volts) SD Figure 6: Body-Diode Characteristics AO3414 2 2 2.5 2 =4.5V =4. =3A = 1.0 1.2 Page Page ...

Page 4

... 100 100 0.00001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse JA 12 0.001 0.01 0.1 Pulse Width (s) www.aosmd.com www.aosmd.com AO3414 C C iss iss C C oss oss C C rss rss (Volts) (Volts Figure 8: Capacitance Characteristics Figure 8: Capacitance Characteristics ...

Page 5

... Qgs Qgs Vds Vds VDC VDC - - Vds Vds + + Vdd Vdd Vgs Vgs d Vds + Vdd VDC Id - Vgs Idt rr Vgs Isd Vdd Vds www.aosmd.com www.aosmd.com AO3414 Charge Charge 90% 90% 10% 10 d(o ff) d(o ff off off BV BV DSS DSS dI/ Vdd Page Page ...

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