AO3422 Alpha & Omega Semiconductor Inc, AO3422 Datasheet
AO3422
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AO3422 Summary of contents
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... AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3422 uses advanced trench technology to provide excellent R and low gate charge. It offers DS(ON) operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. SOT23 ...
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... AO3422 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Source leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO3422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10V (Volts) DS Fig 1: On-Region characteristics 200 180 V =2.5V GS 160 140 120 100 Figure 3: On-Resistance vs. Drain Current and Gate Voltage 360 310 125°C 260 210 160 110 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. ...
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... AO3422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =27. =2. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 0.1s 1.0 1s 10s 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =100°C/W θJA 1 0.1 Single Pulse 0.01 0.00001 0.0001 Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & ...
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... AO3422 Vgs Vds DU T Vgs Rg Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L Vds Id Vgs Vgs Vds + DUT Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Vgs 10V + Qgs Vds VDC - DUT Resistive Switching Test Circuit & Waveforms ...