AOD417 Alpha & Omega Semiconductor Inc, AOD417 Datasheet
AOD417
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AOD417 Summary of contents
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... AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R , low gate charge and low DS(ON) gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. ...
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... AOD417 Electrical Characteristics (T =25° C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AOD417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 -10V (Volts) DS Figure 1: On-Region Characteristics =-4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 125° 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 25 -6V I =-10mA -4. =-3. 1.6 1.4 1 =-10V GS 0.8 0.6 -50 15 ...
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... AOD417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V DS I =-20A (nC) g Figure 7: Gate-Charge Characteristics 1000.0 100.0 10.0 R DS(ON) limited 1.0 0.1 T =175°C J(Max) T =25°C C 0.0 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note =3°C 0.1 Single Pulse 0 ...
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... AOD417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 80 T =25° =150° 0.000001 0.00001 Time in avalanche, t Figure 12: Single Pulse Avalanche capability (°C) CASE Figure 14: Current De-rating (Note =50°C 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & ...
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... AOD417 - VDC + Vgs Ig Vds Vgs Rg Vgs L Vds Id Vgs Rg DUT Vgs Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Vgs -10V - Vds VDC + DUT Resistive Switching Test Circuit & Waveforms RL Vgs - DUT Vdd VDC ...