AOD417 Alpha & Omega Semiconductor Inc, AOD417 Datasheet

MOSFET P-CH -30V -25A TO-252

AOD417

Manufacturer Part Number
AOD417
Description
MOSFET P-CH -30V -25A TO-252
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AOD417

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
34 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
16.2nC @ 10V
Input Capacitance (ciss) @ Vds
920pF @ 15V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1106-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AOD417
Manufacturer:
ALPHAOME
Quantity:
2 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.3mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
General Description
The AOD417 uses advanced trench technology to
provide excellent R
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
AOD417
P-Channel Enhancement Mode Field Effect Transistor
-RoHS Compliant
-Halogen Free*
B,G
Top View
D
B
A
C
DS(ON)
G
C
T
T
T
T
T
T
TO-252
D-PAK
A
A
C
C
A
A
=25° C
=100° C
=25° C
=70° C
=25° C
=100° C
, low gate charge and low
D
S
A
A
A
G
Bottom View
=25° C unless otherwise noted
Steady-State
Steady-State
C
S
t ≤ 10s
Symbol
V
V
I
I
I
E
P
P
T
D
DM
AR
J
DS
GS
AR
D
DSM
, T
G
STG
Symbol
Features
V
I
R
R
R
R
D
DS
DS(ON)
DS(ON)
= -25A
JC
JA
(V) = -30V
< 34m
< 55m
Maximum
-55 to 175
16.7
-20
Typ
±20
-30
-25
-60
-14
2.5
1.6
2.5
30
50
25
40
100% UIS Tested!
100% Rg Tested!
(V
(V
(V
G
GS
GS
GS
= -10V)
= -10V)
= -4.5V)
Max
25
50
3
D
S
www.aosmd.com
Units
Units
° C/W
° C/W
° C/W
mJ
° C
W
W
V
V
A
A

Related parts for AOD417

AOD417 Summary of contents

Page 1

... AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R , low gate charge and low DS(ON) gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. ...

Page 2

... AOD417 Electrical Characteristics (T =25° C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AOD417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 -10V (Volts) DS Figure 1: On-Region Characteristics =-4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 125° 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 25 -6V I =-10mA -4. =-3. 1.6 1.4 1 =-10V GS 0.8 0.6 -50 15 ...

Page 4

... AOD417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V DS I =-20A (nC) g Figure 7: Gate-Charge Characteristics 1000.0 100.0 10.0 R DS(ON) limited 1.0 0.1 T =175°C J(Max) T =25°C C 0.0 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note =3°C 0.1 Single Pulse 0 ...

Page 5

... AOD417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 80 T =25° =150° 0.000001 0.00001 Time in avalanche, t Figure 12: Single Pulse Avalanche capability (°C) CASE Figure 14: Current De-rating (Note =50°C 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & ...

Page 6

... AOD417 - VDC + Vgs Ig Vds Vgs Rg Vgs L Vds Id Vgs Rg DUT Vgs Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Vgs -10V - Vds VDC + DUT Resistive Switching Test Circuit & Waveforms RL Vgs - DUT Vdd VDC ...

Related keywords