AO4435 Alpha & Omega Semiconductor Inc, AO4435 Datasheet - Page 2

• Manufacturer Part Number: AO4435
• Description: MOSFET P-CH -30V -10.5A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4435

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 11A, 20V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1030-2

AO4435
Alpha & Omega Semiconductor, Ltd.
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. E
Rev6: June 2009
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g(10V)
g(4.5V)
gs
gd
rr
DSS
AR
and I
θJA
AR
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
ratings are based on low frequency and duty cycles to keep T
θJA
is measured with the device mounted on 1 in
Parameter
J
=25°C unless otherwise noted)
2
Conditions
I
V
V
V
V
V
V
V
V
I
V
V
V
V
R
I
FR-4 board with 2oz. Copper, in a still air environment with T
D
S
F
F
DS
DS
DS
GS
GS
GS
GS
DS
GS
GS
GS
GS
=-10A, dI/dt=100A/µs
=-10A, dI/dt=100A/µs
GEN
2
= -1A,V
= -250µA, V
FR-4 board with 2oz. Copper, in a still air environment with T
=0V, V
=0V, V
=-10V, V
=-10V, V
= -30V, V
= 0V, V
= V
= -10V, V
= -20V, I
= -10V, I
= -5V, I
= -5V, I
=3Ω
θJL
GS
and lead to ambient.
j
GS
=25C.
I
DS
DS
D
D
GS
D
= 0V
= -250µA
DS
DS
D
D
=-15V, f=1MHz
=0V, f=1MHz
= -10A
= -5A
GS
DS
= ±25V
GS
= -11A
= -10A
=-15V, I
=-15V, R
= 0V
= -5V
= 0V
D
T
T
=-10A
L
J
=1.5Ω,
J
=125°C
= 55°C
Min
-1.7
-30
-80
1
≤ 10s thermal resistance
-0.74
1130
Typ
-2.3
240
155
5.8
9.5
5.5
3.3
8.7
8.5
11
15
15
27
22
18
18
25
12
7
A
=25°C. The SOA
A
±100
1400
Max
-3.5
= 25°C. The
14
19
18
36
24
30
-1
-5
-3
-1
8
Units
www.aosmd.com
mΩ
nC
nC
nC
nC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
A
S
V
A