AO4433 Alpha & Omega Semiconductor Inc, AO4433 Datasheet

MOSFET P-CH -30V -11A 8-SOIC

AO4433

Manufacturer Part Number
AO4433
Description
MOSFET P-CH -30V -11A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4433

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 11A, 20V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
2200pF @ 15V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1029-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4433
Manufacturer:
ST
0
Part Number:
AO4433
Manufacturer:
AOS/万代
Quantity:
20 000
Part Number:
AO4433L
Manufacturer:
AOS/ 万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Avalanche Current
Repetitive avalanche energy 0.1mH
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4433 uses advanced trench technology to
provide excellent R
with a 25V gate rating. This device is suitable for use
as a load switch or in PWM applications.
AO4433
P-Channel Enhancement Mode Field Effect Transistor
AF
D
A
B
DS(ON)
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
and ultra-low low gate charge
C
SOIC-8
S
AF
A
A
=25°C unless otherwise noted
G
B
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
I
E
T
D
DM
AR
J
DS
GS
D
AR
, T
STG
Symbol
Features
V
I
R
R
R
ESD PROTECTED!
100% UIS Tested
100% Rg Tested
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
θJA
θJL
= -11 A
(V) = -30V
< 14mΩ (V
< 36mΩ (V
< 18mΩ (V
Maximum
-55 to 150
-9.7
Typ
±25
-30
-11
-50
2.1
-36
G
65
28
54
21
3
(V
GS
GS
GS
GS
= -20V)
= -5V)
= -20V)
= -10V)
D
S
Max
40
75
30
www.aosmd.com
Units
Units
°C/W
°C/W
°C/W
mJ
°C
W
V
V
A
A

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AO4433 Summary of contents

Page 1

... AO4433 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4433 uses advanced trench technology to provide excellent R and ultra-low low gate charge DS(ON) with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. SOIC Absolute Maximum Ratings T ...

Page 2

... AO4433 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4433 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V -5V - (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 I =-11A (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd -4. =- 1.6 V =-5V GS 1.4 V =-10V GS 1 =-20V GS 0 Figure 4: On-Resistance vs. Junction Temperature 1 ...

Page 4

... AO4433 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V DS I =-11A (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1 =150°C 10s J(Max) T =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =75°C/W θJA 1 0.1 0.01 ...

Page 5

... AO4433 - Vds Vgs Rg Vgs Vds Id Vgs Rg Vgs Vds + DUT Alpha & Omega Semiconductor, Ltd. G ate C harge Test C ircuit & W aveform Vgs -10V - Resistive Switching Test Circuit & Waveforms RL Vgs - DUT Vdd VDC + Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms ...

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