AO3423 Alpha & Omega Semiconductor Inc, AO3423 Datasheet
AO3423
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AO3423 Summary of contents
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... AO3423 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3423/L uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications ESD protected.AO3423 and AO3423L are electrically identical ...
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... AO3423 Electrical Characteristics (T =25°C unless otherwise noted) J Parameter Symbol STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO3423 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 -10.0V -4.0V -8.0V -3.5V 12 -6. (Volts) DS Fig 1: On-Region Characteristics 180 V =-2.5V GS 160 140 V =-4.5V GS 120 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 140 120 100 80 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...
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... AO3423 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (nC) g Figure 7: Gate-Charge Characteristics 10.0 R DS(ON) limited 1.0 1s 10s T =150°C DC J(Max) T =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA θJA J, =90°C/W θJA 1 0.1 Single Pulse 0.01 ...