IRF7324D1TRPBF International Rectifier, IRF7324D1TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7324D1TRPBF
• Description: MOSFET P-CH 20V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7324D1TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 270 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 2.2 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5.2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7324D1PBFTR; IRF7324D1TRPBF; IRF7324D1TRPBFTR

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100
0.1
10
600
500
400
300
200
100
0.0001
1
0
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
(THERMAL RESPONSE)
0.001
Ciss
Coss
Crss
SINGLE PULSE
f = 1 MHZ
10
Power Mosfet Characteristics
0.01
t , Rectangular Pulse Duration (sec)
1
100
0.1
12
10
8
6
4
2
0
0
I D = -2.2A
1. Duty factor D = t / t
2. Peak T = P
Notes:
2
1
Q G Total Gate Charge (nC)
J
V DS = -16V
VDS= -10V
4
IRF7324D1PbF
DM
x Z
1
6
thJA
P
2
10
DM
+ T
8
A
t
1
t
2
10
5
100
12