IRF7324D1TRPBF International Rectifier, IRF7324D1TRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF7324D1TRPBF
• Description: MOSFET P-CH 20V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7324D1TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 270 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 2.2 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5.2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7324D1PBFTR; IRF7324D1TRPBF; IRF7324D1TRPBFTR

IRF7324D1PbF
Notes:
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SO-8 (Fetky) Tape and Reel
8
R
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
I
Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, steady-state
SD
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
θ
is measured at
≤ -2.2A, di/dt ≤ -96A/µs, V
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
T
J
of approximately 90°C.
8.1 ( .318 )
7.9 ( .312 )
TERMINAL NUMBER 1
DD
(12.992)
330.00
MAX.
≤ V
(BR)DSS
, T
J
≤ 150°C
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FEED DIRECTION
12.3 ( .484 )
11.7 ( .461 )
14.40 ( .566 )
12.40 ( .488 )
TAC Fax: [phone]
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