IRF7807VTRPBF International Rectifier, IRF7807VTRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7807VTRPBF
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7807VTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7807VPBFTR; IRF7807VTRPBF; IRF7807VTRPBFTR

Power MOSFET Selection for DC/DC
Converters
Control FET
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the R
MOSFET, but these conduction losses are only about
one half of the total losses.
by;
P
and Q
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Q
Fig 1.
the gate driver between the time that the threshold
voltage has been reached (t1) and the time the drain
current rises to I
age begins to change. Minimizing Q
tor in reducing switching losses in Q1.
put capacitance of the MOSFET during every switch-
ing cycle. Figure 2 shows how Q
parallel combination of the voltage dependant (non-
linear) capacitance’s C
the power supply input buss voltage.
www.irf.com
P
loss
loss
Special attention has been given to the power losses
Power losses in the control switch Q1 are given
This can be expanded and approximated by;
This simplified loss equation includes the terms Q
Q
Q
Q
gs2
gs2
oss
= I
= P
+ I ×
+ Q
+
oss
is the charge that must be supplied to the out-
indicates the charge that must be supplied by
(
is a sub element of traditional gate-source
⎛
⎜
⎝
(
⎛
⎝
which are new to Power MOSFET data sheets.
Q
rms
conduction
g
2
oss
× V
2
Q
× R
i
× V
g
gd
g
dmax
× f
ds(on )
in
× V
+ P
× f
(t2) at which time the drain volt-
)
in
)
switching
× f
⎞
⎠
ds
gs1
and C
⎞
⎟ + I ×
⎠
and Q
+ P
⎛
⎜
⎝
dg
gs2
drive
oss
when multiplied by
, can be seen from
gs2
Q
is formed by the
+ P
i
gs 2
g
is a critical fac-
× V
output
ds(on)
in
× f
of the
⎞
⎟
⎠
gs2
Figure 1: Typical MOSFET switching waveform
Synchronous FET
by;
*dissipated primarily in Q1.
P
P
loss
loss
The power loss equation for Q2 is approximated
t0
V
= P
= I
+ Q
+
GTH
(
(
⎛
⎜
⎝
conduction
rms
Q
t1
g
2
oss
2
× V
× R
× V
t2
g
+ P
ds(on)
× f
IRF7807VPbF
in
Drain Current
drive
× f
t3
)
)
⎞
⎠
+ P
+ Q
output
(
*
Drain Voltage
rr
× V
Gate Voltage
in
× f
4
1
2
)
3