TPCA8028-H(TE12LQM Toshiba, TPCA8028-H(TE12LQM Datasheet

TPCA8028-H(TE12LQM

Manufacturer Part Number

TPCA8028-H(TE12LQM

Description

MOSFET N-CH 30V 50A SOP-8 ADV

Manufacturer

Toshiba

Datasheet

1.TPCA8028-HTE12LQM.pdf (7 pages)

Specifications of TPCA8028-H(TE12LQM

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

2.8 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

50A

Vgs(th) (max) @ Id

2.3V @ 1mA

Gate Charge (qg) @ Vgs

88nC @ 10V

Input Capacitance (ciss) @ Vds

7800pF @ 10V

Power - Max

45W

Mounting Type

Surface Mount

Package / Case

2-5Q1A

Configuration

Single Quad Drain Triple Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0028 Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

50 A

Power Dissipation

2.8 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

TPCA8028-H(TE12LQM
TPCA8028-HTE12LQMTR

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High-Efficiency DC/DC Converter Applications

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Small footprint due to a small and thin package

High-speed switching

Small gate charge: Q

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc=25℃)

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)

(Tc=25℃) (Note 4)

Pulsed (Note 1)

= 20 kΩ)

DSS

= 20 nC (typ.)

(Note 2a)

(Note 2b)

= 1.3 to 2.3 V (V

(t = 10 s)

(Note 1)

(Note 3)

= 10 μA (max) (V

TPCA8028-H

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

| = 166 S (typ.)

stg

= 2.0 mΩ (typ.)

= 10 V, I

= 30 V)

−55 to 150

Rating

4.03

±20

150

325

150

2.8

1.6

= 1 mA)

Unit

°C

Weight: 0.069 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

0.95±0.05

1,2,3:SOURCE 4:GATE

5,6,7,8:DRAIN

0.5±0.1

1.27

4.25±0.2

0.05 S

5.0±0.2

TPCA8028-H

0.4±0.1

2-5Q1A

2008-01-22

―

0.8±0.1

1.1±0.2

0.05 M A

0.15±0.05

0.595

0.166±0.05

Unit: mm

Related parts for TPCA8028-H(TE12LQM

TPCA8028-H(TE12LQM Summary of contents

Page 1

... 2 1 325 4. 150 °C ch −55 to 150 T °C stg 1 TPCA8028-H Unit: mm 0.4±0.1 1.27 0.5±0.1 0. 0.15±0. 0.595 5.0±0.2 A 0.95±0.05 0.166±0.05 0. 1.1±0 4.25±0 0.8±0.1 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) ...

Page 2

... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 2.78 °C/W th (ch-c) (Tc=25℃) R 44.6 °C/W th (ch-a) (Note 2a) R 78.1 °C/W th (ch-a) (Note 2b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCA8028-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( 2008-01-22 ...

Page 3

... gs1 ∼ − (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCA8028-H Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 10 ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ 1.3 2.3 ⎯ 2.3 3.2 ⎯ 2.0 2.8 ⎯ 83 166 ⎯ 6000 ...

Page 4

... Drain-source voltage V 0.4 0.3 0.2 0 (V) Gate-source voltage V 10 Common source Ta = 25°C Pulse test 1 100 0.1 4 TPCA8028-H I – 3.1 3.0 Common source Ta = 25°C Pulse test 2.9 2 – Common source Ta = 25°C Pulse test 12.5 2 ...

Page 5

... C) Drain-source voltage V ° 2.5 C iss 2.0 C oss 1.5 C rss 1.0 Common source 0 Pulse test 0 −80 −40 100 (V) Ambient temperature 100 5 TPCA8028-H I – 4 Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 −0.8 −1.0 ( – 120 160 C) ° 2008-01-22 ...

Page 6

... I D max (Pulse =1ms* 100 t =10ms Single - pulse 1 Ta=25℃ Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain-source voltage – 0.01 0 Pulse width t ( 160 C) ° 100 (V) 6 TPCA8028-H (2) (1) (3) Single - pulse 100 1000 P – 120 160 Case temperature ° C 2008-01-22 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCA8028-H 20070701-EN 2008-01-22 ...

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