TPCA8028-H(TE12LQM Toshiba, TPCA8028-H(TE12LQM Datasheet - Page 4

• Manufacturer Part Number: TPCA8028-H(TE12LQM
• Description: MOSFET N-CH 30V 50A SOP-8 ADV
• Manufacturer: Toshiba

Specifications of TPCA8028-H(TE12LQM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 88nC @ 10V
• Input Capacitance (ciss) @ Vds: 7800pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0028 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCA8028-H(TE12LQM; TPCA8028-HTE12LQMTR

1000
100
100
0.1
50
40
30
20
10
80
60
40
20
10
0
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
10
8
6 5
4
Drain-source voltage V
4.5
Gate-source voltage V
0.2
1
Drain current I
Ta = −55°C
1
3
0.4
2
⎪Y
I
I
100
D
D
100
fs
– V
– V
⎪ – I
DS
GS
0.6
D
25
3
Ta = −55°C
D
2.8
2.9
25
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
0.8
V GS = 2.4V
4
(V)
(V)
2.6
2.7
100
1
5
4
100
0.4
0.3
0.2
0.1
80
60
40
20
10
0
0
1
10
0.1
8
0
0
6 5
Common source
Ta = 25°C
Pulse test
4
4.5
Drain-source voltage V
Gate-source voltage V
2
1
Drain current I
12.5
1
R
V
DS (ON)
4
V GS = 10V
2
I
DS
D
25
4.5
3.1
– V
– V
I D = 50 A
DS
GS
– I
6
3
D
D
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
TPCA8028-H
V GS = 2.5V
4
8
(V)
(V)
2008-01-22
3.0
2.7
2.8
2.9
100
10
5