IPD03N03LA G Infineon Technologies

IPD03N03LA G

Manufacturer Part Number

IPD03N03LA G

Description

MOSFET N-CH 25V 90A TO-252

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Specifications of IPD03N03LA G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.2 mOhm @ 60A, 10V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

90A

Vgs(th) (max) @ Id

2V @ 70µA

Gate Charge (qg) @ Vgs

41nC @ 5V

Input Capacitance (ciss) @ Vds

5200pF @ 15V

Power - Max

115W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

5.1 m Ohms

Forward Transconductance Gfs (max / Min)

113 S / 56 S

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

90 A

Power Dissipation

115 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IPD03N03LA G
IPD03N03LAGINTR
IPD03N03LAGXT
SP000016406

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