MOSFET N-CH 55V 49A TO-220AB

IRFZ44NPBF

Manufacturer Part NumberIRFZ44NPBF
DescriptionMOSFET N-CH 55V 49A TO-220AB
ManufacturerInternational Rectifier
SeriesHEXFET®
TypePower MOSFET
IRFZ44NPBF datasheets
 


Specifications of IRFZ44NPBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs17.5 mOhm @ 25A, 10VDrain To Source Voltage (vdss)55V
Current - Continuous Drain (id) @ 25° C49AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs63nC @ 10VInput Capacitance (ciss) @ Vds1470pF @ 25V
Power - Max94WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Current, Drain49 A
Gate Charge, Total63 nCPackage TypeTO-220AB
PolarizationN-ChannelPower Dissipation94 W
Resistance, Drain To Source On17.5 MilliohmsTemperature, Operating, Maximum+175 °C
Temperature, Operating, Minimum-55 °CTime, Turn-off Delay44 ns
Time, Turn-on Delay12 nsTransconductance, Forward19 S
Voltage, Breakdown, Drain To Source55 VVoltage, Forward, Diode1.3 V
Voltage, Gate To Source±20 VNumber Of Elements1
PolarityNChannel ModeEnhancement
Drain-source On-res0.0175OhmDrain-source On-volt55V
Gate-source Voltage (max)±20VDrain Current (max)49A
Output Power (max)Not RequiredWFrequency (max)Not RequiredMHz
Noise FigureNot RequireddBPower GainNot RequireddB
Drain EfficiencyNot Required%Operating Temp Range-55C to 175C
Operating Temperature ClassificationMilitaryMountingThrough Hole
Pin Count3 +TabTransistor PolarityN-Channel
Drain-source Breakdown Voltage55 VGate-source Breakdown Voltage20 V
Continuous Drain Current41 AMounting StyleThrough Hole
Gate Charge Qg42 nCLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names*IRFZ44NPBF  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (227Kb)Embed
Next
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Lead-Free
l
Description
®
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
Parameter
R
Junction-to-Case
θJC
R
Case-to-Sink, Flat, Greased Surface
θCS
R
Junction-to-Ambient
θJA
www.irf.com
G
@ 10V
GS
@ 10V
GS



ƒ
300 (1.6mm from case )
Typ.
0.50
PD - 94787B
IRFZ44NPbF
®
HEXFET
Power MOSFET
D
V
= 55V
DSS
R
= 17.5mΩ
DS(on)
I
= 49A
D
S
TO-220AB
Max.
Units
49
35
A
160
94
W
0.63
W/°C
± 20
V
25
A
9.4
mJ
5.0
V/ns
-55 to + 175
°C
10 lbf•in (1.1N•m)
Max.
Units
–––
1.5
–––
°C/W
–––
62
1

IRFZ44NPBF Summary of contents

  • Page 1

    ... Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G @ 10V GS @ 10V GS    ƒ 300 (1.6mm from case ) Typ. 0. 94787B IRFZ44NPbF ® HEXFET Power MOSFET 55V DSS R = 17.5mΩ DS(on 49A D S TO-220AB Max. Units 160 94 W 0.63 W/° ...

  • Page 2

    Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

  • Page 3

    VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...

  • Page 4

    1MHz iss rss 2000 oss iss 1500 1000 C oss 500 C ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 SINGLE PULSE 0.02 0.01 (THERMAL ...

  • Page 6

    D.U 20V 0.01 Ω Charge 6 300 15V 240 DRIVER 180 + 120 60 ...

  • Page 7

    D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

  • Page 8

    E XAMPLE : T HIS 1010 L OT CODE 1789 AS S EMB 19, 2000 EMB LY L INE "C" Note: "P" embly line ...