IRFH5006TR2PBF International Rectifier, IRFH5006TR2PBF Datasheet - Page 3

MOSFET N-CH 60V 100A 5X6 PQFN

IRFH5006TR2PBF

Manufacturer Part Number
IRFH5006TR2PBF
Description
MOSFET N-CH 60V 100A 5X6 PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFH5006TR2PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.1 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
4175pF @ 30V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-PowerVQFN
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
250 W
Gate Charge Qg
67 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH5006TR2PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH5006TR2PBF
Manufacturer:
BOURNS
Quantity:
400 000
Part Number:
IRFH5006TR2PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
100000
10000
1000
1000
1000
100
100
Fig 3. Typical Transfer Characteristics
100
0.1
0.1
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
2
1
C rss
C iss
C oss
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
3.8V
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
3
1
4
V DS = 25V
≤60µs PULSE WIDTH
f = 1 MHZ
≤ 60µs PULSE WIDTH
Tj = 25°C
10
T J = 25°C
5
10
TOP
BOTTOM
6
VGS
10V
8.0V
6.0V
5.0V
4.5V
4.3V
4.0V
3.8V
100
100
7
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
14.0
12.0
10.0
10
8.0
6.0
4.0
2.0
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
I D = 50A
I D = 50A
V GS = 10V
10 20 30 40 50 60 70 80 90 100
3.8V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
V DS = 48V
V DS = 30V
VDS= 12V
1
≤ 60µs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM
VGS
10V
8.0V
6.0V
5.0V
4.5V
4.3V
4.0V
3.8V
100
3

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