IRFH5006TR2PBF International Rectifier, IRFH5006TR2PBF Datasheet - Page 5

• Manufacturer Part Number: IRFH5006TR2PBF
• Description: MOSFET N-CH 60V 100A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5006TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.1 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4175pF @ 30V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 250 W
• Gate Charge Qg: 67 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5006TR2PBFTR

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Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
10
Fig 15a. Switching Time Test Circuit
9
8
7
6
5
4
3
4
R G
20V
V DS
6
V GS, Gate -to -Source Voltage (V)
t p
8
≤ 0.1
≤ 1
I AS
D.U.T
0.01 Ω
L
10
T J = 25°C
T J = 125°C
12
14
15V
DRIVER
16
I D = 50A
+
-
+
-
V DD
18
A
20
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
1200
1000
800
600
400
200
90%
V
10%
V
0
I
DS
AS
GS
25
Fig 15b. Switching Time Waveforms
Starting T J , Junction Temperature (°C)
t
d(on)
50
t
t p
r
75
t
100
d(off)
V
(BR)DSS
TOP
BOTTOM 50A
t
f
125
I D
7.9A
14A
150
5