IRFH5006TR2PBF International Rectifier, IRFH5006TR2PBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5006TR2PBF
• Description: MOSFET N-CH 60V 100A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5006TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.1 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4175pF @ 30V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 250 W
• Gate Charge Qg: 67 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5006TR2PBFTR

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
200
150
100
100
0.0001
0.1
50
10
0.001
0
1
0.01
Fig 9. Maximum Drain Current vs.
0.1
0.2
25
1E-006
1
Case (Bottom) Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
0.4
V SD , Source-to-Drain Voltage (V)
T J = 150°C
D = 0.50
50
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
0.01
0.02
0.20
0.10
0.05
0.6
75
Limited By Package
0.8
1E-005
T J = 25°C
100
1.0
V GS = 0V
125
1.2
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
1.4
Fig 10. Threshold Voltage vs. Temperature
1000
100
4.0
3.5
3.0
2.5
2.0
1.5
10
0.001
Fig 8. Maximum Safe Operating Area
1
-75 -50 -25
0
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 150µA
I D = 500µA
I D = 1.0mA
I D = 1.0A
V DS , Drain-to-Source Voltage (V)
10msec
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
1
0.01
25
DC
50
1msec
75 100 125 150
10
100µsec
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0.1
100