IXFH26N60P IXYS, IXFH26N60P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFH26N60P
Manufacturer Part Number
IXFH26N60P
Description
MOSFET N-CH 600V 26A TO-247
Specifications of IXFH26N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
72nC @ 10V
Input Capacitance (ciss) @ Vds
4150pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
26 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
26 A
Power Dissipation
460000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
26
Rds(on), Max, Tj=25°c, (?)
0.27
Ciss, Typ, (pf)
4150
Qg, Typ, (nc)
72
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
460
Rthjc, Max, (ºc/w)
0.27
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AR
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P&TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220 & PLUS220SMD
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
≤ I
GS
= 25°C to 150°C; R
= 25°C to 150°C
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 25°C
≤ 150°C, R
TM
DM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
, di/dt ≤ 100 A/μs, V
GS
DSS
, I
D
D
D
= 250 μA
= 4 mA
G
= 0.5 I
DS
= 5 Ω
= 0 V
D25
GS
= 1 MΩ
DD
≤ V
T
J
= 125°C
DSS
JM
IXFH26N60P
IXFT26N60P
IXFV26N60P
IXFV26N60PS
600
Min.
2.5
11..65/2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
600
600
±30
±40
460
150
300
260
1.2
6.0
5.0
4.0
26
65
13
40
10
±100
250
270
Max.
5.0
25
V/ns
N/lb
mΩ
mJ
° C
° C
μA
μA
nA
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
g
J
TO-268 (IXFT)
TO-247 (IXFH)
PLUS220 (IXFV)
PLUS220SMD (IXFV...S)
G = Gate
S = Source
Features
Advantages
Fast Recovery diode
Unclamped Inductive Switching (UIS)
rated
International standard packages
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DS(on)
DSS
G
G
G
D
D
G
S
S
S
= 600
= 26
≤ ≤ ≤ ≤ ≤ 270 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200
S
D = Drain
TAB = Drain
D (TAB)
DS99435E(12/06)
D (TAB)
ns
A
V
D (TAB)
Related parts for IXFH26N60P
IXFH26N60P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.2 ≤ DSS 460 -55 ... +150 150 -55 ... +150 300 260 1 ...
... Fig. 1. Output Characteristics º Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 (T = 25°C, unless otherwise specified 0 pulse test DS D D25 = MHz 0 ...
... DS(on) 0.5 I Value vs. I D25 3 10V GS 2.8 2.4 2 1.6 1.2 0 Amperes D Fig. 7. Input Adm ittance º 125 º º - 4 Volts G S © 2006 IXYS All rights reserved º C 3.2 = 10V 2.8 7V 2.4 6V 1.6 1.2 5V 0.8 0 º 125 º 6 ...
... C iss 1000 C oss 100 C rss Volts D S 1.00 0.10 0.01 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. 10 º 0.8 0 Fig. 12. Maxim um Transient Therm al Resistance 0.001 0.01 Pulse Width - Seconds IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS Fig ...
... Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC PLUS220SMD (IXFV_S) Outline © 2006 IXYS All rights reserved IXFH 26N60P IXFV 26N60P IXFV 26N60PS TO-268 (IXFT) Outline IXFT 26N60P PLUS220 (IXFV) Outline ...
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