IXFH26N60P IXYS, IXFH26N60P Datasheet - Page 2

• Manufacturer Part Number: IXFH26N60P
• Description: MOSFET N-CH 600V 26A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFH26N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 4150pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 26 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 26 A
• Power Dissipation: 460000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 26
• Rds(on), Max, Tj=25°c, (?): 0.27
• Ciss, Typ, (pf): 4150
• Qg, Typ, (nc): 72
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 460
• Rthjc, Max, (ºc/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
24
20
16
12
8
4
0
0
1
Fig. 1. Output Characteristics
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
I
Q
S
SM
RM
d(on)
r
d(off)
f
rr
fs
iss
oss
rss
thJC
thCs
SD
2
g(on)
gs
gd
RM
V
D S
@ 25
3
4,850,072
4,881,106
- Volts
V
GS =
Test Conditions
V
V
V
R
V
(PLUS220 & TO-247)
Test Conditions
V
Repetitive
I
I
V
º
F
F
C
4
DS
GS
GS
GS
GS
R
G
= I
= 25A, -di/dt = 100 A/μs
= 100V; V
10V
4,931,844
5,017,508
5,034,796
= 0 V
7V
= 20 V; I
= 10 V, V
= 5 Ω (External)
= 10 V, V
S
= 0 V, V
, V
6V
5V
5
GS
= 0 V, pulse test
5,049,961
5,063,307
5,187,117
GS
Characteristic Curves
D
DS
DS
DS
= 0.5 I
6
= 0 V
= 25 V, f = 1 MHz
= 0.5 I
= 0.5 V
D25
7
5,237,481
5,381,025
5,486,715
D25
, pulse test
DSS
, I
D
(T
(T
= 0.5 I
6,162,665
6,259,123 B1
6,306,728 B1
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
60
54
48
42
36
30
24
18
12
6
0
D25
Fig. 2. Extended Output Characteristics
0
6,404,065 B1
6,534,343
6,583,505
IXFH 26N60P
Min.
Min.
3
IXFV 26N60P IXFV 26N60PS
16
Characteristic Values
Characteristic Values
6
4150
Typ. Max.
Typ. Max.
150
400
0.21
0.7
26
27
25
27
75
21
72
27
24
9
7
6,683,344
6,710,405B2
6,710,463
V
GS
12
0.27 °C/W
@ 25
V
200
D S
1.5
= 10V
26
78
15
7V
- Volts
º
°C/W
C
6,727,585
6,759,692
6,771,478 B2
μC
nC
nC
nC
6V
5V
pF
pF
pF
ns
ns
ns
ns
ns
18
S
A
A
V
A
IXFT 26N60P
21
24
27
30