MOSFET N-CH 600V 30A TO-247

IXTH30N60P

Manufacturer Part NumberIXTH30N60P
DescriptionMOSFET N-CH 600V 30A TO-247
ManufacturerIXYS
SeriesPolarHV™
IXTH30N60P datasheet
 


Specifications of IXTH30N60P

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs240 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C30AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs82nC @ 10VInput Capacitance (ciss) @ Vds5050pF @ 25V
Power - Max540WMounting TypeThrough Hole
Package / CaseTO-247ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.24 Ohms
Forward Transconductance Gfs (max / Min)25 sDrain-source Breakdown Voltage600 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current30 A
Power Dissipation540 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Vdss, Max, (v)600Id(cont), Tc=25°c, (a)30
Rds(on), Max, Tj=25°c, (?)0.24Ciss, Typ, (pf)5050
Qg, Typ, (nc)82Trr, Typ, (ns)500
Pd, (w)540Rthjc, Max, (k/w)0.23
Package StyleTO-247Lead Free Status / RoHS StatusLead free / RoHS Compliant
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PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25° C to 150° C
DSS
J
V
T
= 25° C to 150° C; R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25° C
D25
C
I
T
= 25° C, pulse width limited by T
DM
C
I
T
= 25° C
AR
C
E
T
= 25° C
AR
C
E
T
= 25° C
AS
C
dv/dt
I
≤ I
, di/dt ≤ 100 A/µs, V
S
DM
≤ 150° C, R
= 4 Ω
T
J
G
P
T
= 25° C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
T
Plastic body for 10 s
SOLD
M
Mounting torque
(TO-3P, TO-247)
d
F
Mounting force
(PLUS220)
C
Weight
TO-247
TO-3P
PLUS220
TO-268
Symbol
Test Conditions
(T
= 25° C, unless otherwise specified)
J
BV
V
= 0 V, I
= 250 µA
DSS
GS
D
V
V
= V
, I
= 250µA
GS(th)
DS
GS
D
= ±30 V, V
I
V
= 0
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 0.5 I
DS(on)
GS
D
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
IXTH 30N60P
IXTQ 30N60P
IXTT 30N60P
IXTV 30N60P
IXTV 30N60PS
Maximum Ratings
600
= 1 MΩ
600
GS
±30
±40
30
80
JM
30
50
1.5
≤ V
,
10
DD
DSS
540
-55 ... +150
150
-55 ... +150
300
260
1.13/10 Nm/lb.in.
11..65/2.5..15
6.0
5.5
4.0
5.0
Characteristic Values
Min.
Typ.
Max.
600
3.0
±100
T
= 125° C
250
J
240
V
= 600
DSS
I
= 30
D25
≤ ≤ ≤ ≤ ≤ 240 m Ω Ω Ω Ω Ω
R
DS(on)
TO-247 (IXTH)
V
V
V
V
G
D
A
S
A
TO-3P (IXTQ)
A
mJ
J
G
V/ns
D
S
W
TO-268 (IXTT)
°C
°C
°C
G
S
° C
° C
PLUS220 (IXTV)
N/lb.
g
G
g
D
g
S
g
PLUS220 (IXTV...S)
G
V
S
G = Gate
D = Drain
5.0
V
S = Source
TAB = Drain
nA
Features
l
Fast Recovery diode
µA
25
l
Unclamped Inductive Switching (UIS)
µA
rated
l
International standard packages
m Ω
l
Low package inductance
- easy to drive and to protect
V
A
D (TAB)
D (TAB)
D (TAB)
D (TAB)
D (TAB)
DS99251E(12/05)

IXTH30N60P Summary of contents

  • Page 1

    ... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.5 ≤ ...

  • Page 2

    ... V - Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 IXTH 30N60P IXTQ 30N60P IXTT 30N60P Test Conditions (T = 25° C, unless otherwise specified 0.5 I ...

  • Page 3

    ... I - Amperes D Fig. 7. Input Adm ittance º 125 º º - 3 Volts G S © 2006 IXYS All rights reserved IXTH 30N60P IXTQ 30N60P IXTT 30N60P C 3.4 = 10V 3.1 7V 2.8 2.5 6V 2.2 5.5V 1.9 1.6 1.3 5V 0.7 4.5V 0 º 125 º ...

  • Page 4

    ... olts S D Fig. 11. Capacitance 10000 1000 100 f = 1MH olts D S 1.00 0.10 0.01 0.1 IXYS reserves the right to change limits, test conditions, and dimensions. IXTH 30N60P IXTQ 30N60P IXTT 30N60P 10 º 0.8 0.9 1 1.1 100 C iss 10 C oss C rss Fig. 13. Maximum Transient Thermal Resistance ...

  • Page 5

    ... Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 S 6.15 BSC TO-268 (IXTT) Outline © 2006 IXYS All rights reserved IXTH 30N60P IXTQ 30N60P IXTT 30N60P Package Outline Drawings Inches Max. .209 .102 .098 .055 .084 .123 .031 .845 .640 ...

  • Page 6

    ... PLUS220SMD (IXTV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Package Outline Drawings ...