IXTH30N60P IXYS, IXTH30N60P Datasheet - Page 5

• Manufacturer Part Number: IXTH30N60P
• Description: MOSFET N-CH 600V 30A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTH30N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Input Capacitance (ciss) @ Vds: 5050pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohms
• Forward Transconductance Gfs (max / Min): 25 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 540 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.24
• Ciss, Typ, (pf): 5050
• Qg, Typ, (nc): 82
• Trr, Typ, (ns): 500
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
TO-247AD (IXTH) Outline
TO-268 (IXTT) Outline
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
1
Millimeter
4.7
2.2
2.2
1.0
3 - Source
.4
2
21.46
16.26
20.32
3
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
2 - Drain
Tab - Drain
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
Package Outline Drawings
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
TO-3P (IXTQ) Outline
PLUS220 (IXTV) Outline
IXTV 30N60P IXTV 30N60PS