IXTH30N60P IXYS, IXTH30N60P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTH30N60P
Manufacturer Part Number
IXTH30N60P
Description
MOSFET N-CH 600V 30A TO-247
Specifications of IXTH30N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
82nC @ 10V
Input Capacitance (ciss) @ Vds
5050pF @ 25V
Power - Max
540W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohms
Forward Transconductance Gfs (max / Min)
25 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
540 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.24
Ciss, Typ, (pf)
5050
Qg, Typ, (nc)
82
Trr, Typ, (ns)
500
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
© 2006 IXYS All rights reserved
GSS
DSS
D25
DM
AR
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
C
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting force
TO-247
TO-3P
PLUS220
TO-268
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
D
= 250 µA
= 250µA
= 0.5 I
G
DS
= 4 Ω
= 0
D25
(TO-3P, TO-247)
(PLUS220)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
IXTH 30N60P
IXTQ 30N60P
IXTT 30N60P
IXTV 30N60P
IXTV 30N60PS
JM
,
600
Min.
3.0
11..65/2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
600
600
±30
±40
540
150
300
260
1.5
6.0
5.5
4.0
5.0
30
80
30
50
10
±100
250
240
Max.
5.0
25
N/lb.
V/ns
m Ω
mJ
nA
µA
µA
° C
° C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
g
g
g
J
TO-3P (IXTQ)
TO-268 (IXTT)
PLUS220 (IXTV)
PLUS220 (IXTV...S)
G = Gate
S = Source
Features
l
l
l
l
TO-247 (IXTH)
Fast Recovery diode
Unclamped Inductive Switching (UIS)
rated
International standard packages
Low package inductance
- easy to drive and to protect
V
I
R
G
D25
DS(on)
DSS
G
D
G
D
S
D
G
S
S
G
= 600
= 30
≤ ≤ ≤ ≤ ≤ 240 m Ω Ω Ω Ω Ω
S
S
D = Drain
TAB = Drain
DS99251E(12/05)
D (TAB)
D (TAB)
D (TAB)
D (TAB)
D (TAB)
A
V
Related parts for IXTH30N60P
IXTH30N60P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.5 ≤ ...
... V - Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 IXTH 30N60P IXTQ 30N60P IXTT 30N60P Test Conditions (T = 25° C, unless otherwise specified 0.5 I ...
... I - Amperes D Fig. 7. Input Adm ittance º 125 º º - 3 Volts G S © 2006 IXYS All rights reserved IXTH 30N60P IXTQ 30N60P IXTT 30N60P C 3.4 = 10V 3.1 7V 2.8 2.5 6V 2.2 5.5V 1.9 1.6 1.3 5V 0.7 4.5V 0 º 125 º ...
... olts S D Fig. 11. Capacitance 10000 1000 100 f = 1MH olts D S 1.00 0.10 0.01 0.1 IXYS reserves the right to change limits, test conditions, and dimensions. IXTH 30N60P IXTQ 30N60P IXTT 30N60P 10 º 0.8 0.9 1 1.1 100 C iss 10 C oss C rss Fig. 13. Maximum Transient Thermal Resistance ...
... Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 S 6.15 BSC TO-268 (IXTT) Outline © 2006 IXYS All rights reserved IXTH 30N60P IXTQ 30N60P IXTT 30N60P Package Outline Drawings Inches Max. .209 .102 .098 .055 .084 .123 .031 .845 .640 ...
... PLUS220SMD (IXTV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Package Outline Drawings ...
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