IXFX140N25T IXYS, IXFX140N25T Datasheet - Page 2

MOSFET N-CH 140A 250V PLUS247

IXFX140N25T

Manufacturer Part Number
IXFX140N25T
Description
MOSFET N-CH 140A 250V PLUS247
Manufacturer
IXYS
Series
GigaMOS™r
Datasheet

Specifications of IXFX140N25T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
140A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
255nC @ 10V
Input Capacitance (ciss) @ Vds
19000pF @ 25V
Power - Max
960W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
140
Rds(on), Max, Tj=25°c, (?)
0.017
Ciss, Typ, (pf)
19000
Qg, Typ, (nc)
255
Trr, Typ, (ns)
-
Trr, Max, (ns)
-
Pd, (w)
960
Rthjc, Max, (k/w)
0.13
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFX140N25T
Manufacturer:
IXYS
Quantity:
12 000
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 60A, V
= 70A, -di/dt = 100A/µs
= 75V, V
= 10V, I
= 0V, V
= 15V, V
= 1Ω (External)
= 10V, V
= 0V
ADVANCE TECHNICAL INFORMATION
GS
D
DS
GS
DS
DS
= 60A, Note 1
= 0V, Note 1
= 25V, f = 1MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
80
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
1500
0.15
135
185
255
Typ.
0.60
9.30
19
22
90
62
6,162,665
6,259,123 B1
6,306,728 B1
33
29
92
Typ.
Max.
0.13
Max.
200
140
560
1.3
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
µC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXFK) Outline
PLUS 247
6,727,585
6,771,478 B2 7,071,537
Dim.
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
1
2
1
2
Terminals: 1 - Gate
20.80
15.75
19.81
25.91
19.81
20.32
TM
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
Min.
Millimeter
5.45 BSC
Millimeter
5.46 BSC
(IXFX) Outline
7,005,734 B2
7,063,975 B2
IXFK140N25T
IXFX140N25T
26.16
19.96
20.83
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
21.34
16.13
20.32
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
7,157,338B2
Max.
1.030
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072

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