IXFX140N25T IXYS, IXFX140N25T Datasheet - Page 3

• Manufacturer Part Number: IXFX140N25T
• Description: MOSFET N-CH 140A 250V PLUS247
• Manufacturer: IXYS
• Series: GigaMOS™r

Specifications of IXFX140N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 140A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 255nC @ 10V
• Input Capacitance (ciss) @ Vds: 19000pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 140
• Rds(on), Max, Tj=25°c, (?): 0.017
• Ciss, Typ, (pf): 19000
• Qg, Typ, (nc): 255
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 960
• Rthjc, Max, (k/w): 0.13
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
140
120
100
140
120
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
80
60
40
20
80
60
40
20
0
0
0.0
0.0
0
Fig. 5. R
V
0.2
GS
0.5
40
= 10V
0.4
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
1.0
DS(on)
80
0.6
1.5
vs. Drain Current
0.8
Normalized to I
120
I
D
V
V
@ 25ºC
@ 125ºC
2.0
- Amperes
1.0
DS
DS
160
V
- Volts
- Volts
GS
V
1.2
GS
2.5
= 10V
= 10V
7V
8V
200
1.4
7V
8V
3.0
6V
5V
D
1.6
= 70A Value
240
6V
5V
T
J
3.5
= 125ºC
1.8
T
J
= 25ºC
280
4.0
2.0
2.2
320
4.5
160
140
120
100
320
280
240
200
160
120
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
60
40
20
80
40
0
0
-50
-50
0
V
Fig. 4. R
GS
V
GS
Fig. 2. Extended Output Characteristics
-25
-25
2
= 10V
= 10V
Fig. 6. Maximum Drain Current vs.
8V
4
DS(on)
vs. Junction Temperature
0
0
T
C
7V
6V
5V
T
- Degrees Centigrade
Case Temperature
6
J
Normalized to I
25
25
- Degrees Centigrade
V
@ 25ºC
8
DS
50
50
- Volts
I
10
D
= 140A
75
75
IXFK140N25T
IXFX140N25T
12
D
= 70A Value
100
100
IXYS REF:F_140N25T(9W)3-25-09
14
I
D
= 70A
125
125
16
150
150
18