IXFX140N25T IXYS, IXFX140N25T Datasheet - Page 4

• Manufacturer Part Number: IXFX140N25T
• Description: MOSFET N-CH 140A 250V PLUS247
• Manufacturer: IXYS
• Series: GigaMOS™r

Specifications of IXFX140N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 140A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 255nC @ 10V
• Input Capacitance (ciss) @ Vds: 19000pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 140
• Rds(on), Max, Tj=25°c, (?): 0.017
• Ciss, Typ, (pf): 19000
• Qg, Typ, (nc): 255
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 960
• Rthjc, Max, (k/w): 0.13
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
180
160
140
120
100
350
300
250
200
150
100
100
80
60
40
20
50
0
0
3.0
0.2
0
0.3
f
= 1 MHz
5
3.5
0.4
Fig. 9. Forward Voltage Drop of
0.5
10
Fig. 7. Input Admittance
4.0
T
Fig. 11. Capacitance
J
0.6
= 125ºC
Intrinsic Diode
15
V
V
0.7
SD
DS
4.5
V
GS
- Volts
- Volts
0.8
20
- Volts
5.0
T
0.9
J
T
= 125ºC
J
25
- 40ºC
= 25ºC
25ºC
1.0
C rss
C iss
C oss
5.5
1.1
30
1.2
6.0
35
1.3
6.5
1.4
40
1,000
220
200
180
160
140
120
100
100
80
60
40
20
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
1
R
T
T
Single Pulse
Fig. 12. Forward-Bias Safe Operating Area
V
I
I
DS(
J
C
20
D
G
DS
30
= 150ºC
= 70A
= 10mA
on
= 25ºC
= 125V
)
Limit
40
60
Fig. 8. Transconductance
60
Fig. 10. Gate Charge
90
10
Q
I
D
G
80
- Amperes
- NanoCoulombs
T
V
120
J
DS
= - 40ºC
100
- Volts
25ºC
150
125ºC
120
IXFK140N25T
IXFX140N25T
180
100
140
1ms
210
160
25µs
100µs
240
180
1000
200
270