AO6401A Alpha & Omega Semiconductor Inc, AO6401A Datasheet

MOSFET P-CH -30V -3.7A 6-TSOP

AO6401A

Manufacturer Part Number
AO6401A
Description
MOSFET P-CH -30V -3.7A 6-TSOP
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO6401A

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
44 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1180pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1068-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO6401A
Manufacturer:
Alpha
Quantity:
35 000
Part Number:
AO6401A
Manufacturer:
ALPHA
Quantity:
20 000
Rev 1: Mar 2011
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO6401A uses advanced trench technology to
provide excellent R
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
Top View
B
Parameter
DS(ON)
C
T
T
T
T
A
A
A
A
=25° C
=70° C
=25° C
=70° C
, low gate charge and operation
Pin1
TSOP6
A
A D
A
=25° C unless otherwise noted
Bottom View
t ≤ 10s
Steady-State
Steady-State
Symbol
V
V
I
I
P
T
Symbol
www.aosmd.com
D
DM
J
DS
GS
D
, T
R
R
STG
JA
JL
Product Summary
V
I
R
R
R
D
G
D
D
DS
DS(ON)
DS(ON)
DS(ON)
(at V
Top View
47.5
Typ
2
3
74
37
1
(at V
(at V
(at V
GS
=-10V)
GS
GS
GS
6
4
5
Maximum
-55 to 150
=-10V)
=-2.5V)
=-4.5V)
±12
-30
-28
1.3
-5
-4
2
D
D
S
30V P-Channel MOSFET
Max
62.5
110
50
G
AO6401A
-30V
-5A
< 47m
< 64m
< 85m
D
S
Units
Units
° C/W
° C/W
° C/W
° C
W
V
V
A
Page 1 of 5

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AO6401A Summary of contents

Page 1

... General Description The AO6401A uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON) with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. TSOP6 Top View Bottom View Pin1 Absolute Maximum Ratings T =25° ...

Page 2

... FR-4 board with 2oz. Copper still air environment with T =150° C, using ≤ 10s junction-to-ambient thermal resistance. =150° C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150° C. The SOA curve provides a single pulse ratin g. J(MAX) www.aosmd.com AO6401A Min Typ Max Units - =55° C ...

Page 3

... Figure 2: Transfer Characteristics (Note E) 1.8 1.6 =-2.5V 1.4 =-4.5V 1.2 1 =-10V 0 Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 I =-5A D 1.0E+00 40 1.0E-01 1.0E-02 125° C 1.0E-03 1.0E-04 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO6401A 125° C 25° 1 (Volts =-10V =-4. =- =-2. =- ...

Page 4

... 100 0.00001 Figure 10: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.01 0.1 1 Pulse Width (s) www.aosmd.com AO6401A C iss C oss (Volts =25° 0.001 0.1 10 1000 Pulse Width (s) Ambient (Note F) ...

Page 5

... Resistive Switching Test Circuit & Waveforms d(on) Vgs r - DUT Vdd VDC + Vds 1 Vds - Vgs Vdd VDC Id + Vgs Diode Recovery Test Circuit & Waveforms Vgs -Isd - Vdd VDC - -Vds www.aosmd.com AO6401A Qg Qgd Qgs Charge t off t t d(off) f 90% 10% BV DSS Idt dI/ Vdd Page ...

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