SI2312BDS-T1-E3 Vishay, SI2312BDS-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI2312BDS-T1-E3
• Description: MOSFET N-CH 20V 3.9A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI2312BDS-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Vgs(th) (max) @ Id: 850mV @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.031 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.9 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 31mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 450mV
• Power Dissipation Pd: 1.25W
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.031Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2312BDS-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73235
S-80642-Rev. B, 24-Mar-08
0.001
0.01
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0.1
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5.0 A
1
0.2
On-Resistance vs. Drain Current
= 10 V
V
GS
3
V
T
SD
2
J
= 1.8 V
Q
= 150 °C
- Source-to-Drain Voltage (V)
g
0.4
- Total Gate Charge (nC)
I
D
3
Gate Charge
- Drain Current (A)
6
0.6
4
T
J
= 25 °C
9
5
0.8
V
V
GS
GS
6
= 4.5 V
= 2.5 V
12
1.0
7
1.2
15
8
1200
1000
0.20
0.15
0.10
0.05
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
1
= 5.0 A
= 4.5 V
C
4
V
V
oss
T
DS
0
2
GS
J
C
- Junction Temperature (°C)
iss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
I
D
= 5.0 A
25
Capacitance
3
8
50
Vishay Siliconix
4
C
Si2312BDS
rss
12
75
5
www.vishay.com
100
6
16
125
7
150
20
8
3