SI2312BDS-T1-E3 Vishay, SI2312BDS-T1-E3 Datasheet

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SI2312BDS-T1-E3

Manufacturer Part Number
SI2312BDS-T1-E3
Description
MOSFET N-CH 20V 3.9A SOT23-3
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr

Specifications of SI2312BDS-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
31 mOhm @ 5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.9A
Vgs(th) (max) @ Id
850mV @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Power - Max
750mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.031 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3.9 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
5A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
31mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
450mV
Power Dissipation Pd
1.25W
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.031Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2312BDS-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2312BDS-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
61 918
Part Number:
SI2312BDS-T1-E3
Manufacturer:
Maxim
Quantity:
73
Part Number:
SI2312BDS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2312BDS-T1-E3
Quantity:
1 367
Company:
Part Number:
SI2312BDS-T1-E3
Quantity:
70 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 73235
S10-0791-Rev. D, 05-Apr-10
PRODUCT SUMMARY
V
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
DS
20
(V)
0.031 at V
0.037 at V
0.047 at V
a
R
b
DS(on)
b
GS
GS
GS
(Ω)
= 4.5 V
= 2.5 V
= 1.8 V
J
= 150 °C)
a
Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free)
N-Channel 20 V (D-S) MOSFET
a
I
D
5.0
4.6
4.1
(A)
a
A
G
S
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
1
2
Si2312BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
L = 0.1 mH
7.5
T
T
T
T
(Typ.)
Si2312BDS (M2)*
A
A
A
A
* Marking Code
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
(SOT-23)
Top View
TO-236
FEATURES
3
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
J
Definition
V
V
E
I
I
P
, T
D
I
DM
thJA
thJF
AS
I
DS
GS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
1.25
0.80
120
5 s
5.0
4.0
1.0
80
50
- 55 to 150
8.45
± 8
20
15
13
Steady State
Maximum
0.63
0.75
0.48
100
166
3.9
3.1
60
Vishay Siliconix
Si2312BDS
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI2312BDS-T1-E3 Summary of contents

Page 1

... PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.031 4 0.037 2 0.047 1 Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current b Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction) a Power Dissipation ...

Page 2

... Si2312BDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73235 S10-0791-Rev. D, 05-Apr-10 1200 1000 0.8 1.0 1.2 Si2312BDS Vishay Siliconix C iss 800 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 ...

Page 4

... Si2312BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.3 0.2 0 250 µA D 0.0 - 0.1 - 0.2 - 0.3 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Seating Plane C MILLIMETERS Max 1.12 0.10 1.02 0.50 0.18 3.04 2.64 1.40 0.95 BSC 1.90 BSC 0.60 0.64 Ref 0.50 Ref 8° Package Information Vishay Siliconix 0. Gauge Plane Seating Plane INCHES Min Max 0.035 0.044 0.0004 0.004 0.0346 0.040 0.014 0.020 ...

Page 6

... See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET footprint ...

Page 7

... RECOMMENDED MINIMUM PADS FOR SOT-23 Return to Index Return to Index Document Number: 72609 Revision: 21-Jan-08 0.037 0.022 (0.950) (0.559) 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix www.vishay.com 25 ...

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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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