SI2312BDS-T1-E3 Vishay, SI2312BDS-T1-E3 Datasheet
SI2312BDS-T1-E3
Specifications of SI2312BDS-T1-E3
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SI2312BDS-T1-E3 Summary of contents
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... PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.031 4 0.037 2 0.047 1 Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current b Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction) a Power Dissipation ...
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... Si2312BDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
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... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73235 S-80642-Rev. B, 24-Mar °C 0.8 1.0 1.2 Si2312BDS Vishay Siliconix 1200 1000 C iss 800 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1 ...
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... Si2312BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.3 0.2 0 250 µA D 0.0 - 0.1 - 0.2 - 0.3 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...