SI2312BDS-T1-E3 Vishay, SI2312BDS-T1-E3 Datasheet - Page 5

no-image

SI2312BDS-T1-E3

Manufacturer Part Number
SI2312BDS-T1-E3
Description
MOSFET N-CH 20V 3.9A SOT23-3
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr

Specifications of SI2312BDS-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
31 mOhm @ 5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.9A
Vgs(th) (max) @ Id
850mV @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Power - Max
750mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.031 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3.9 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
5A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
31mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
450mV
Power Dissipation Pd
1.25W
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.031Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2312BDS-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2312BDS-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
61 918
Part Number:
SI2312BDS-T1-E3
Manufacturer:
Maxim
Quantity:
73
Part Number:
SI2312BDS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2312BDS-T1-E3
Quantity:
1 367
Company:
Part Number:
SI2312BDS-T1-E3
Quantity:
70 000
SOT-23 (TO-236): 3-LEAD
Document Number: 71196
09-Jul-01
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
A
Dim
A
A
E
L
e
A
A
b
D
E
L
S
q
c
e
1
1
2
1
1
1
A
2
S
1
e
b
3
D
1
e
0.085
Min
0.89
0.01
0.88
0.35
2.80
2.10
1.20
0.40
2
MILLIMETERS
E
1
0.95 BSC
1.90 BSC
0.64 Ref
0.50 Ref
E
C
Seating Plane
0.10 mm
0.004"
Max
1.12
0.10
1.02
0.50
0.18
3.04
2.64
1.40
0.60
C
C
0.0004
0.0346
0.035
0.014
0.003
0.110
0.083
0.047
0.016
Min
Package Information
L
L
1
INCHES
0.0374 Ref
0.0748 Ref
0.025 Ref
0.020 Ref
q
Vishay Siliconix
0.25 mm
Seating Plane
Gauge Plane
0.044
0.004
0.040
0.020
0.007
0.120
0.104
0.055
0.024
Max
www.vishay.com
1

Related parts for SI2312BDS-T1-E3