SI2312BDS-T1-E3 Vishay, SI2312BDS-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI2312BDS-T1-E3
• Description: MOSFET N-CH 20V 3.9A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI2312BDS-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Vgs(th) (max) @ Id: 850mV @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.031 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.9 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 31mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 450mV
• Power Dissipation Pd: 1.25W
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.031Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2312BDS-T1-E3TR

Si2312BDS
Vishay Siliconix
Notes:
a. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
b
15
12
9
6
3
0
0
V
a
GS
V
1
DS
Output Characteristics
= 4.5 V thru 2 V
a
- Drain-to-Source Voltage (V)
a
A
= 25 °C, unless otherwise noted
2
Symbol
R
V
I
t
t
I
I
DS(on)
V
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
Q
Q
g
R
t
t
t
DS
SD
rr
fs
gs
gd
r
f
g
rr
g
3
1.5 V
1 V
V
I
V
D
DS
DS
≅ 1.0 A, V
I
F
= 10 V, V
= 20 V, V
V
V
V
V
V
V
V
V
V
V
= 1.0 A, dI/dt = 100 A/µs
4
DS
DS
I
DS
GS
GS
GS
GS
S
DD
DS
DS
Test Conditions
= 1.0 A, V
= V
≥ 10 V, V
= 0 V, V
= 0 V, I
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 20 V, V
= 10 V, R
= 15 V, I
f = 1.0 MHz
GEN
GS
GS
GS
, I
= 4.5 V, I
= 0 V, T
= 4.5 V, R
D
D
GS
GS
D
GS
= 250 µA
D
D
D
= 250 µA
GS
L
= 5.0 A
= 5.0 A
= 4.6 A
= 4.1 A
= ± 8 V
= 10 Ω
= 4.5 V
= 0 V
= 0 V
J
D
= 70 °C
g
= 5.0 A
= 6 Ω
15
12
9
6
3
0
0
0.25
Min.
0.45
1.1
20
15
V
0.5
Transfer Characteristics
GS
T
25 °C
C
- Gate-to-Source Voltage (V)
= 125 °C
0.75
Limits
0.025
0.030
0.036
Typ.
0.8
7.5
1.4
1.2
2.2
4.5
30
30
35
10
13
9
S10-0791-Rev. D, 05-Apr-10
1.0
Document Number: 73235
- 55 °C
1.25
± 100
0.031
0.037
0.047
Max.
0.85
1.2
3.3
75
12
15
45
55
15
25
1
7
1.5
1.75
Unit
nA
µA
nC
nC
ns
Ω
Ω
V
A
S
V
2.0