IRFR9020PBF Vishay, IRFR9020PBF Datasheet - Page 2

• Manufacturer Part Number: IRFR9020PBF
• Description: MOSFET P-CH 50V 9.9A DPAK
• Manufacturer: Vishay

Specifications of IRFR9020PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 9.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.9 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9.9A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V
c. I
d. 0.063" (1.6 mm) from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
www.vishay.com
2
Maximum Junction-to-Ambient
Case-to-Sink
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
SD
DD
≤ - 9.9 A, dI/dt ≤ -120 A/μs, V
= - 25 V, Starting T
J
= 25 °C, L = 5.1 mH, R
J
c
a
a
= 25 °C, unless otherwise noted
b
DD
≤ 40 V, T
SYMBOL
J
SYMBOL
R
≤ 150 °C.
V
t
t
C
C
R
R
I
I
C
g
R
V
DS(on)
C
Q
Q
GS(th)
d(off)
GSS
DSS
d(on)
g
Q
L
L
t
t
thCS
DS
oss
thJA
thJC
iss
rss
= 25 Ω, Peak I
gs
gd
fs
r
f
D
S
= 25 °C, unless otherwise noted
g
V
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact.
DS
GS
GS
T
(Independent operating temperature)
for 10 s
C
= 0.8 x max. rating, V
= - 10 V
= - 10 V
R
L
= 25 °C
g
= - 9.9 A
V
MIN.
= 18 Ω, R
DS
V
V
V
-
-
-
V
DS
DD
f = 1.0 MHz, see fig. 9
DS
GS
TEST CONDITIONS
= max. rating, V
≤ - 50 V, I
= - 25 V, I
= V
I
= 0 V, I
D
V
V
= - 9.7 A, V
V
GS
DS
(Independent operating
GS
D
GS
= 2.4 Ω, see fig. 15
, I
= - 25 V,
= ± 20 V
rating, see fig. 16
= 0 V,
D
D
temperature)
DS
= - 250 μA
= - 250 μA
I
D
GS
D
= - 9.7 A,
SYMBOL
= 5.7 A
= - 5.7 A
= 0 V, T
T
dV/dt
DS
TYP.
GS
J
E
E
1.7
I
P
, T
AR
AS
AR
-
-
D
= 0.8 x max.
= 0 V
stg
G
b
J
= 125 °C
D
S
- 55 to + 150
MIN.
- 2.0
- 50
MAX.
2.3
110
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
LIMIT
3.0
- 9.9
300
-
250
4.2
5.8
42
S10-1135-Rev. C, 10-May-10
d
Document Number: 90350
TYP.
0.20
490
320
3.5
9.4
4.3
4.3
8.2
4.5
7.5
70
57
12
25
-
-
-
-
-
MAX.
± 500
1000
- 4.0
0.28
250
6.5
6.5
14
12
66
18
38
-
-
-
-
-
-
-
UNIT
°C/W
UNIT
V/ns
mJ
mJ
°C
A
W
UNIT
nC
nH
nA
μA
pF
ns
Ω
S
V
V