SI4401BDY-T1-E3 Vishay, SI4401BDY-T1-E3 Datasheet

MOSFET P-CH 40V 8.7A 8-SOIC

SI4401BDY-T1-E3

Manufacturer Part Number
SI4401BDY-T1-E3
Description
MOSFET P-CH 40V 8.7A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4401BDY-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 10.5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
8.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 5V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.014 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.7 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-8.7A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
21mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4401BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4401BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
24 887
Part Number:
SI4401BDY-T1-E3
Manufacturer:
NICCOMPHIA
Quantity:
30 000
Part Number:
SI4401BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4401BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4401BDY-T1-E3
0
Company:
Part Number:
SI4401BDY-T1-E3
Quantity:
285
Company:
Part Number:
SI4401BDY-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73140
S09-0866-Rev. D, 18-May-09
Ordering Information: Si4401BDY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
- 40
DS
G
S
S
S
(V)
1
2
3
4
0.021 at V
0.014 at V
Top View
SO-8
R
DS(on)
Si4401BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
GS
GS
(Ω)
= - 4.5 V
= - 10 V
8
7
6
5
J
a
= 150 °C)
a
D
D
D
D
P-Channel 40-V (D-S) MOSFET
a
I
- 10.5
- 8.7
D
(A)
a
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
T
T
T
T
(Typ.)
40
L = 1 mH
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
J
Definition
V
V
E
I
I
P
, T
I
DM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
G
g
P-Channel MOSFET
Tested
®
Power MOSFET
Typical
- 10.5
- 8.3
- 2.6
10 s
1.85
2.9
36
70
16
D
S
- 55 to 150
± 20
- 40
- 50
30
45
Steady State
Maximum
- 1.36
- 8.7
- 5.9
0.95
1.5
43
84
21
Vishay Siliconix
Si4401BDY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4401BDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4401BDY-T1-E3 (Lead (Pb)-free) Si4401BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si4401BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-Drain Diode Forward Voltage Document Number: 73140 S09-0866-Rev. D, 18-May-09 4500 4000 3500 3000 2500 2000 1500 1000 500 0.05 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 Si4401BDY Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 10 1.6 1.4 1.2 1.0 0.8 0 ...

Page 4

... Si4401BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0.6 0 250 µA D 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on 0 °C C Single Pulse ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73140. Document Number: 73140 S09-0866-Rev. D, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4401BDY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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