SI4401BDY-T1-E3 Vishay, SI4401BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4401BDY-T1-E3
• Description: MOSFET P-CH 40V 8.7A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4401BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.014 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.7 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -8.7A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 21mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4401BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73140
S09-0866-Rev. D, 18-May-09
0.030
0.025
0.020
0.015
0.010
0.005
0.000
50
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 10.5 A
5
0.2
On-Resistance vs. Drain Current
= 15 V
10
V
V
T
GS
10
SD
J
Q
= 150 °C
= 4.5 V
g
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
I
D
15
Gate Charge
- Drain Current (A)
20
0.6
20
30
25
0.8
V
T
GS
J
30
= 25 °C
= 10 V
40
1.0
35
1.2
40
50
4500
4000
3500
3000
2500
2000
1500
1000
0.05
0.04
0.03
0.02
0.01
0.00
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
5
GS
= 10.5 A
C
= 10 V
oss
2
V
V
10
DS
GS
T
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
15
C
Capacitance
25
iss
4
I
D
20
50
= 10.5 A
Vishay Siliconix
C
rss
Si4401BDY
6
25
75
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100
30
8
125
35
40
150
10
3